Rchr
J-GLOBAL ID：201901016601074086
Update date: Sep. 22, 2024
Nabatame Toshihide
Nabatame Toshihide
Affiliation and department：
Research field (1)：
Electronic devices and equipment
Research keywords (5)：
Metal thin film
, Electronic device
, Thin film
, Semiconductor
, Atomic layer deposition
Research theme for competitive and other funds (1)：
- 2020 - 2024 原子レベルで酸素欠損制御したナノラミネート複合機能膜と巨大誘電率の発現メカニズム
Papers (196)：
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Bo Da, Long Cheng, Xun Liu, Kunji Shigeto, Zihang Zhang, Kazuhito Tsukagoshi, Toshihide Nabatame, Zejun Ding, Jiangwei Liu, Hideki Yoshikawa, et al. Exploring high-symmetry structures in non-Cartesian coordinates: preparation and characteristics of cylindrically symmetric rotating crystals. Science and Technology of Advanced Materials: Methods. 2024
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Yoshihiro Irokawa, Toshihide Nabatame, Tomomi Sawada, Manami Miyamoto, Hiromi Miura, Kazuhito Tsukagoshi, Yasuo Koide. A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process. ECS Journal of Solid State Science and Technology. 2024. 13. 8. 085003
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Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, et al. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. Journal of Applied Physics. 2024. 135. 18
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Takashi Onaya, Toshihide Nabatame, Takahiro Nagata, Kazuhito Tsukagoshi, Jiyoung Kim, Chang-Yong Nam, Esther H.R. Tsai, Koji Kita. Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1-xO2 thin films. Solid-State Electronics. 2023. 108801-108801
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Toshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi. (Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias Stress. ECS Transactions. 2023. 112. 1. 109-117
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MISC (19)：
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色川芳宏, 鈴木拓, 弓削雅津也, 大井暁彦, 生田目俊秀, 木本浩司, 大西剛, 三石和貴, 小出康夫. GaN(0001)自然酸化膜の複合的評価. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2018. 79th. ROMBUNNO.18p-PA6-20
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女屋 崇, 生田目 俊秀, 澤本 直美, 大井 暁彦, 池田 直樹, 知京 豊裕, 小椋 厚志. ZrO2シード層がHf[x]Zr1-xO2薄膜の強誘電性へ及ぼす効果 (シリコン材料・デバイス). 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2017. 117. 260. 39-44
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女屋 崇, 生田目 俊秀, 澤田 朋実, 栗島 一徳, 澤本 直美, 大井 暁彦, 知京 豊裕, 小椋 厚志. ZrO2/Al2O3/ZrO2多層を用いたDRAMキャパシタにおけるAl2O3層が電気特性に及ぼす効果 (シリコン材料・デバイス). 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2016. 116. 118. 27-32
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Kohama Kazuyuki, Ito Kazuhiro, Nishibata Atsushi, Sano Takayuki, Nabatame Toshihide, Ohi Akihiko. Effect of Cu(Ti)/IGZO-Junction Interface on IGZO-TFT Performance. Preprints of the National Meeting of JWS. 2016. 2016. 160-161
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Characterization of Cu(Ti)-electrode formation on IGZO. Annual report of Quantum Science and Engineering Center. 2016. 18. 100-105
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Patents (10)：
Education (2)：
- 1985 - 1987 東北大学大学院 工学研究科 応用化学専攻
- 1982 - 1985 Tohoku University Faculty of Engineering
Work history (3)：
- 2009/04 - 現在 National Institute for Materials Science
- 2003/03 - 2009/04 株式会社 ルネサステクノロジ
- 1987/04 - 2003/03 株式会社 日立製作所日立研究所
Awards (5)：
- 2020/06 - Journal of Vacuum Science & Technology A JVST A 2019 Best ALD Paper Award Correlation Between SiO2 Growth Rate and Difference in Electronegativity of Metal-Oxide Underlayers for Plasma Enhanced Atomic Layer Deposition Using Tris(dimethylamino)silane Precursor
- 2018/10 - The Japan Society of Applied Physics The 79th JSAP Autumn Meeting, 2018 Poster Award High breakdown voltage of n-GaN MOS capacitors with HfSiOx insulator
- 2018/09 - 応用物理学会 応用物理学会フェロー
- 2005/05 - 電子情報通信学会 論文賞 0.10 μm DRAM用MIM/Ta2O5キャパシタプロセスの開発
- 2004/06 - 電気化学会 電子材料委員会 第65回半導体集積回路技術シンポジウムアワード賞
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