Art

J-GLOBAL ID：202002235260746240   Reference number：20A0844619

Synthesis of Boron Nitride Nanosheets by Physical Vapor Deposition and Control of Film Quality

物理気相成長法による窒化ホウ素薄膜の合成と膜品質の制御

Author (4)： YOSHIZATO MIKITO (東京工大) ,  HIRATA YUKI (東京工大) ,  AKASAKA HIROKI (東京工大) ,  OTAKE NAOTO (東京工大)
Material： 精密工学会大会学術講演会講演論文集  (精密工学会大会シンポジウム資料集)
Volume： 2020  Issue： 春季(CD-ROM)  Page： ROMBUNNO.E17  Publication year： Mar. 01, 2020 
JST Material Number： Y0914A  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： boron nitride ,  layer ,  *physical vapor deposition ,  stability ,  compound semiconductor ,  band gap ,  insulator ,  solid state device ,  chemical vapor deposition ,  hazardous gas ,  explosibility ,  chemical synthesis ,  magnetron sputtering ,  annealing (heat treatment) ,  substrate (plate) ,  manufacturing ,  wide band gap ,  chemical stability ,  atomic layer ,  synthesis method ,  copper board ,  *thin film manufacturing ,  *hexagonal boron nitride ,  wide band gap semiconductor ,  electron device
Semi thesaurus term： post annealing method ,  wide band-gap semiconductor ,  chemical vapor deposition ,  electron device ,  toxic gas

JST classification (8)： Techniques and equipment of thin film deposition  (BK14020I) ,  Thin films of other inorganic compounds  (BK14060A) ,  Nitrogen and its compounds  (YB02050S) ,  Insulating materials  (NA04030W) ,  Techniques and equipment of crystal growth  (BK13020B) ,  Crystal growth of other inorganic compounds  (BK13060T) ,  Vapor plating  (WC08022K) ,  Manufacturing technology of solid-state devices  (NC03030V)

Reference (4)：

• H. Wang et al., Adv. Mater., 2015, 27, 8109-8115.
• X.W. Zhang et al., Small, 2015, 11, 13, 1542-1547.
• Z. Chen et al., Thin Solid Films, 2017, 90-95.
• F. Sevim et al., Korean J. Chem. Eng., 2006, 23, 5, 736-740.

Terms in the title (3)： 物理気相成長法 ,  窒化ホウ素 ,  薄膜