Omori Masato

オオモリマサト | Omori Masato

Affiliation and department：

Research field (4)： Thin-film surfaces and interfaces , Crystal engineering , Electronic devices and equipment , Electric/electronic material engineering

Research keywords (5)： power semiconductors , semiconductor devices , power device , III-V族化合物半導体 , GaN

Research theme for competitive and other funds (7)：

2018 - 2021 Development of an optically-gated GaN power device
2014 - 2018 Piezoelectric effects in GaN-based HEMTs and related devices and a new method
2013 - 2015 Growth and characterization of semiconductor nanowire structures formed by closely stacked self-assembled quantum dots
2011 - 2014 Electron transport in triangular-barriers with buried type-II quantum dots and their photodetector applications
2011 - 2014 Development of diagnosis and therapy-integrated medical devices with liposomes containing quantum dots and hollow nanofibers against brain tumors.

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Papers (22)：

Masato Omori, Taisei Miyazaki, Kenta Watanabe, Maito Shiraishi, Ryusei Wada, Takashi Okawa. Determination of Mg acceptor concentration in GaN through photoluminescence. Applied Physics Express. 2021. 14. 5. 051002-051002
Hideki Sakurai, Tetsuo Narita, Masato Omori, Shinji Yamada, Akihiko Koura, Malgorzata Iwinska, Keita Kataoka, Masahiro Horita, Nobuyuki Ikarashi, Michal Bockowski, et al. Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing. Applied Physics Express. 2020. 13. 8. 086501
Shinji Yamada, Masato Omori, Hideki Sakurai, Yamato Osada, Ryuichiro Kamimura, Tamotsu Hashizume, Jun Suda, Tetsu Kachi. Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching. Applied Physics Express. 2019. 13. 1. 016505
Hideki Sakurai, Masato Omori, Shinji Yamada, Yukihiro Furukawa, Hideo Suzuki, Tetsuo Narita, Keita Kataoka, Masahiro Horita, Michal Bockowski, Jun Suda, et al. Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing. Applied Physics Letters. 2019. 115. 14. 142104
Masamichi Akazawa, Ryo Kamoshida, Shunta Murai, Tetsuo Narita, Masato Omori, Jun Suda, Tetsu Kachi. Effects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 2019. 257. 2. 1900367

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MISC (53)：

坪井辰哉, 日高昭日, 大川峰司, 大森雅登. Determination of Si donor concentration in GaN by photoluminescence method. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
幾田大智, 佐藤翔太, 大森雅登. Dependence of channel mobility in GaN-MOSFET on gate oxide deposition methods. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
大森雅登, 渡邉健太, 坪井辰哉, 日高昭日, 大川峰司. Annealing temperature dependence of hole concentration for Mg-ion-implanted GaN. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2022. 83rd
大森雅登. Development of an optically-gated GaN power transistor. 岩谷直治記念財団研究報告書. 2021. 44
白石舞翔, 宮崎泰成, 和田竜垂, 渡邉健太, 大川峰司, 大森雅登. Photoluminescence study on Mg-ion-implanted GaN with ultra-high-pressure annealing. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th

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Patents (8)：

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Education (1)：

2002 - 2007 The University of Tokyo The Graduate School of Engineering Department of Electronic Engineering

Professional career (1)：

Doctor of Philosophy in Engineering (The University of Tokyo)

Work history (3)：

2019/04 - 現在 Oita University Faculty of Science and Technology Associate Professor
2016/08 - 2019/03 Nagoya University Institute of Materials and Systems for Sustainability
2007/04 - 2016/07 Toyota Technological Institute

Association Membership(s) (3)：

The Japan Institute of Electronics Packaging , The Advanced Power Semiconductors , The Japan Society of Applied Physics

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