N-face (000-1) GaN/InN/GaN double-heterostructures emitting near-IR photoluminescence grown by metalorganic vapor phase epitaxy
(International Workshop on Nitride Semiconductors 2018 2018)
One- or two-monolayer-thick InN single quantum wells fabricated on step-free GaN surfaces
(19th International Conference on Metalorganic Vapor Phase Epitaxy 2018)
MOVPE growth of wurtzite BN-related alloys
(12th International Conference on Nitride Semiconductors 2017)
Realization of ZnO-Nanowire-Induced Nanocavities in Grooved SiN Photonic Crystals
(The 2016 MRS Fall Meeting & Exhibit 2016)
Atomic Level C-AFM Characterization of GaN Grown Under Spiral Mode
(International Workshop on Nitride Semiconductors 2016 2016)
