花房宏明

ハナフサヒロアキ | Hiroaki Hanafusa

所属機関・部署：
職名：准教授
ホームページURL (1件)： http://kaken.nii.ac.jp/d/r/70630763.ja.html

研究分野 (1件)：電子デバイス、電子機器

競争的資金等の研究課題 (3件)：

論文 (19件)：

Hoa Thi Khanh Nguyen, Hiroaki Hanafusa, Ryuji Kawakita, Shohei Hayashi, Takuma Sato, Seiichiro Higashi. Investigation on characteristics of millisecond solid-phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication. Japanese Journal of Applied Physics. 2021. 60. 10
Kazuki Segawa, Hiroaki Hanafusa, Yuri Mizukawa, Seiichiro Higashi. Large area annealing by magnetic field scanning of atmospheric pressure thermal plasma beam. Japanese Journal of Applied Physics. 2020. 59
Tomotaka Hirano, Fumiyasu Kondo, Satoshi Nagasawa, Hiroaki Hanafusa, Yuri Mizukawa, Seiichiro Higashi. Development of high-yield layer transfer process of single-crystalline silicon thin films on plastic substrate and its application to multi-functional device integration. Japanese Journal of Applied Physics. 2020. 59
Hiroaki Hanafusa, Ryosuke Nakashima, Wataru Nakano, Seiichiro Higashi. Extremely high-power-density atmospheric-pressure thermal plasma jet generated by the nitrogen-boosted effect. Japanese Journal of Applied Physics. 2018. 57. 6
Ryosuke Nakashima, Ryota Shin, Hiroaki Hanafusa, Seiichiro Higashi. Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films. JAPANESE JOURNAL OF APPLIED PHYSICS. 2017. 56. 6

MISC (69件)：

特許 (1件)：

経歴 (2件)：

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花房 宏明