Nagase Masanori

ナガセマサノリ | Nagase Masanori

Affiliation and department：
Job title： Senior Researcher
Homepage URL (1)： https://unit.aist.go.jp/riaep/index.html

Research field (1)： Electronic devices and equipment

Research keywords (5)： Semiconductor device , Quantum well , Tunneling effect , Intersubband transition , Ultrafast signal processing

Research theme for competitive and other funds (6)：

2020 - 2024 次世代コンピューティング技術構築に向けた高速サブバンド間遷移不揮発メモリの開発
2017 - 2021 Development of high-speed nonvolatile memory using intersubband transitions in GaN-based resonant tunneling diodes
2014 - 2017 Fabrication of GaN-based resonant tunneling diodes and investigation of their terahertz oscillation
2010 - 2012 冷却フリー・大出力ダイヤモンドパワーデバイスの研究開発
2007 - 2011 次世代高効率ネットワークデバイス技術開発

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Papers (38)：

Masanori Nagase, Tokio Takahashi, Mitsuaki Shimizu. Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates. JOURNAL OF APPLIED PHYSICS. 2024. 135. 14. 145704-1-145704-12
Masanori Nagase, Tokio Takahashi, Mitsuaki Shimizu. Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunneling diodes. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2023. 38. 4. 045011-1-045011-12
Shin Miura, Kenta Kurahashi, Keishiro Goshima, Masanori Nagase. Analysis of terahertz double dielectric structure patch antenna using nitride semiconductors. ELECTRONICS AND COMMUNICATIONS IN JAPAN. 2023. 106. 1. e12390-1-e12390-10
Masanori Nagase, Tokio Takahashi, Mitsuaki Shimizu. Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High-Performance Nonvolatile Memory. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2021. 218. 3. 2000495-1-2000495-7
Nagase Masanori, Takahashi Tokio, Shimizu Mitsuaki. Switching characteristics of nonvolatile memory using GaN/AlN resonant tunneling diodes. JAPANESE JOURNAL OF APPLIED PHYSICS. 2019. 58. 9. 091001-1-091001-6

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MISC (15)：

Shin Miura, Kenta Kurahashi, Keishiro Goshima, Masanori Nagase. Analysis of Terahertz Double Dielectric Structure Patch Antenna Using Nitride Semiconductors. IEEJ Transactions on Electronics, Information and Systems. 2022. 142. 12. 1245-1252
椋橋健太, 永瀬成範, 三浦進, 五島敬史郎. FDTD法による窒化物半導体を用いたテラヘルツ帯パッチアンテナの解析. 2021年電子情報通信学会総合大会講演論文集. 2021
三浦進, 椋橋健太, 五島敬史郎, 永瀬成範. GaN系テラヘルツ受信器実現に向けたパッチアンテナ解析. 電気・電子・情報関係学会東海支部連合大会. 2020
永瀬成範. 窒化物半導体デバイスの開発. 令和2年度文部科学省ナノテクノロジープラットフォーム利用成果発表会. 2020
三浦進, 椋橋健太, 五島敬史郎, 高橋言緒, 永瀬成範. THz受信器応用に向けたNi/n-GaNショットキーバリアダイオード特性の評価. 第67回応用物理学会春季学術講演会講演予稿集. 2020

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Patents (8)：

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Professional career (1)：

Association Membership(s) (2)：

IEEE , The Japan Society of Applied Physics

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