Rchr
J-GLOBAL ID：200901014083638329   Update date: Jul. 17, 2024

Kojima Kazutoshi

コジマ カズトシ | Kojima Kazutoshi
Affiliation and department：
National Institute of Advanced Industrial Science and Technology Advanced Power Electronics Research Center

About National Institute of Advanced Industrial Science and Technology Advanced Power Electronics Research Center


Homepage URL  (1)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=K51210778
Research field  (1)： Electric/electronic material engineering
Research theme for competitive and other funds  (2)：
  • 2020 - 2023 High-quality hetero-epitaxial AlN research by newly proposed high temperature metalorganic vapor phase epitaxy
  • 2020 - 2023 Research on Silicon-Carbide IoT Platform for Harsh Environment Applications
Papers (153)：
  • Mitsuru Sometani, Kunihide Oozono, Shiyang Ji, Takeshi Tawara, Tadao Morimoto, Tomohisa Kato, Kazutoshi Kojima, Shinsuke Harada. Comparison of 1.2 kV SiC Superjunction MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth. IEEJ Transactions on Electronics, Information and Systems. 2024. 144. 3. 257-262
  • Atsuki Hidaka, Yuki Kondo, Akinobu Takeshita, Hideharu Matsuura, Kazuma Eto, Shiyang Ji, Kazutoshi Kojima, Tomohisa KATO, Sadafumi Yoshida, Hajime Okumura. Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition. Japanese Journal of Applied Physics. 2023
  • Takuma Doi, Shigehisa Shibayama, Mitsuo Sakashita, Kazutoshi Kojima, Mitsuaki Shimizu, Osamu Nakatsuka. Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height. Applied Physics Express. 2022. 15. 1. 015501-015501
  • Hideharu Matsuura, Yuki Kondo, Kosuke Iida, Atsuki Hidaka, Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura. Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC. JAPANESE JOURNAL OF APPLIED PHYSICS. 2021. 60. 3
  • Takuma Narahara, Shin-Ichiro Sato, Kazutoshi Kojima, Yasuto Hijikata, Takeshi Ohshima. Influences of hydrogen ion irradiation on NcVsi- formation in 4H-silicon carbide. Applied Physics Express. 2021. 14. 2
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MISC (49)：
  • Hideharu Matsuura, Akinobu Takeshita, Atsuki Hidaka, Shiyang Ji, Kazuma Eto, Takeshi Mitani, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura. Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC (vol 59, 051004, 2020). JAPANESE JOURNAL OF APPLIED PHYSICS. 2020. 59. 8
  • Yuichi Yamazaki, Yoji Chiba, Yoji Chiba, Takahiro Makino, Shin Ichiro Sato, Naoto Yamada, Takahiro Satoh, Yasuto Hijikata, Kazutoshi Kojima, Sang Yun Lee, et al. Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing. Journal of Materials Research. 2018
  • Keiko Masumoto, Chiaki Kudou, Kentaro Tamura, Johji Nishio, Sachiko Ito, Kazutoshi Kojima, Toshiyuki Ohno, Hajime Okumura. Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition (vol 381, pg 139, 2013). JOURNAL OF CRYSTAL GROWTH. 2013. 383. 172-172
  • T. Ohshima, M. Deki, T. Makino, N. Iwamoto, S. Onoda, T. Hirao, K. Kojima, T. Tomita, S. Matsuo, S. Hashimoto. Breakdown Voltage In Silicon Carbide Metal-Oxide-Semiconductor Devices Induced By Ion Beams. APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY. 2013. 1525. 654-658
  • Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura, Kazuo Arai. Homoepitaxial growth on a 4H-SiC C-face substrate. CHEMICAL VAPOR DEPOSITION. 2006. 12. 8-9. 489-494
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Patents (6)：
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Professional career (1)：
  • 博士(工学) (筑波大学)
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