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J-GLOBAL ID：200901017152180614 Update date: Mar. 24, 2025

Hiramoto Toshiro

ヒラモトトシロウ | Hiramoto Toshiro

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Affiliation and department：
Job title： Professor
Homepage URL (1)： http://www.vlsi.iis.u-tokyo.ac.jp/index-j.html

Research field (1)： Electronic devices and equipment

Research keywords (29)：ナノエレクトロニクス , ナノテクノロジー , ナノデバイス , 量子ドット , 単電子トランジスタ , 単一電子デバイス , 量子効果 , SOI , 低消費電力 , CMOS , MOSFET , 集積回路 , VLSI , シリコン , 半導体 , Nanodevices , Nanoelectronics , Nanotechnology , Quantum dot , Single electron transistor , Single electron devices , Quantum effect , Low power , SOI , CMOS , MOSFET , VLSI , Silicon , Semiconductor

Research theme for competitive and other funds (40)：

2022 - 2026 Generation and extraction of device fingerprints (quantum fingerprints) based on physics of spin qubits
2019 - 2023 三次元集積化に向けたスケーラブルな積層構造シリコン量子ビットに関する研究
2014 - 2020 新世代Si-IGBTと応用基本技術の研究開発
2018 - 2019 マルチモーダルな超低消費電力エッジシステムに向けたAIコンピューティング技術の研究開発
2017 - 2019 電源電圧0.1V動作に向けたトランジスタの特性ばらつきの自己収束機構に関する研究

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Papers (331)：

Xiang Zhou, Wataru Saito, Toshiro Hiramoto. Demonstration of superior UIS robustness of 3300 V scaled IGBT by non-proportional scaling methods. Japanese Journal of Applied Physics. 2025
Sung-Hun Kim, Kaito Hikake, Zhuo Li, Yuki Itoya, Kota Sakai, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi. Nanosheet oxide semiconductor FETs with ALD InZnO x compared to InGaO x. Japanese Journal of Applied Physics. 2025
Yuki Itoya, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi. Enhanced reliability of ferroelectric Hf0.5Zr0.5O2 capacitors by bottom electrode surface oxidation. Japanese Journal of Applied Physics. 2025
Zihao Liu, Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Hiroshi Oka, Takahiro Mori, Masaharu Kobayashi, Toshiro Hiramoto. Cryogenic threshold voltage and on-current variability comparative analysis of same-fab 65 nm bulk and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Japanese Journal of Applied Physics. 2024
Xingyu Huang, Kaito Hikake, Sung-Hun Kim, Kota Sakai, Zhuo Li, Tomoko Mizutani, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, et al. High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling. IEEE Transactions on Electron Devices. 2024

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MISC (323)：

後藤正英, 本田悠葵, 難波正和, 井口義則, 更屋拓哉, 小林正治, 日暮栄治, 年吉洋, 平本俊郎. SOIウェハのハイブリッド接合を用いた画素並列3層積層CMOSイメージセンサ-Pixel-Parallel 3-Layer Stacked CMOS Image Sensors Using Hybrid Bonding of SOI Wafers. 「センサ・マイクロマシンと応用システム」シンポジウム論文集電気学会センサ・マイクロマシン部門 [編]. 2022. 39. 5p
後藤正英, 本田悠葵, 難波正和, 井口義則, 更屋拓哉, 小林正治, 日暮栄治, 年吉洋, 平本俊郎. SOIウェハのハイブリッド接合を用いた3層積層画素並列CMOSイメージセンサ-3-Layer Stacked Pixel-Parallel CMOS Image Sensors Using Hybrid Bonding of SOI Wafers-情報センシング. 映像情報メディア学会技術報告 = ITE technical report. 2022. 46. 14. 5-8
後藤正英, 中谷真規, 本田悠葵, 渡部俊久, 難波正和, 井口義則, 更屋拓哉, 小林正治, 日暮栄治, 年吉洋, et al. Multi-Layer Stacking Technology for Pixel-Parallel CMOS Image Sensors by Using Room-Temperature Wafer Bonding. 映像情報メディア学会冬季大会講演予稿集(CD-ROM). 2020. 2020
執行直之, 渡辺正裕, 角嶋邦之, 星井拓也, 古川和由, 中島昭, 佐藤克己, 末代知子, 更屋拓哉, 高倉俊彦, et al. Three-Dimensional Device Simulation of Si IGBTs-Investigation of physical models and comparisons with measurements-. 電子情報通信学会技術研究報告(Web). 2020. 120. 239(SDM2020 22-34)
Triple-Layered Ring Oscillators and Image Sensors Developed by Direct Bonding of SOI Wafers. 2019. 119. 284. 45-49

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Patents (8)：

半導体装置及び記憶装置並びにその制御方法
ラッチ回路の電圧特性調整方法および半導体装置の電圧特性調整方法並びにラッチ回路の電圧特性調整器
電気化学素子および電気化学素子を用いた相補型回路
半導体記憶装置
半導体集積回路装置およびその製造方法

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Education (2)：

1984 - 1989 The University of Tokyo
1982 - 1984 The University of Tokyo The Faculty of Engineering Department of Electronic Engineering

Professional career (1)：

Doctor of Engineering (The University of Tokyo)

Work history (5)：

1996 - 2002 The University of Tokyo VLSI (Very Scale Integration Large) Design and Education Center
2002 - - 東京大学生産技術研究所教授
1994 - 1996 The University of Tokyo Institute of Industrial Science
1993 - 1994 スタンフォード大学客員研究員
1989 - 1994 Hitachi, Ltd.,

Committee career (15)：

2024/06 - 現在 VLSI Symposium on Technology Executive Committee Chair
2012/04 - 現在 IEC TC91国内委員会委員長
1999 - 現在電子情報通信学会シリコンデバイス・材料研究会委員
2025 - SSDM 組織委員長
2022/03 - 2024/03 応用物理学会会長

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Awards (12)：

2023/12 - IEEE EDS IEEE EDS Leo Esaki Award Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model
2022/12 - IEEE EDS IEEE EDS Paul Rappaport Award Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application
2022/10 - 経済産業省産業標準化事業表彰(経済産業大臣表彰賞) 電子実装技術
2022/01 - Imaging Sensors and Systems Conference Arnaud Darmont Award for Best Paper, Electronics Imaging 2022, Imaging Sensors and Systems Conference 2022 3-Layer stacked pixel-parallel CMOS image sensors using hybrid bonding of SOI wafers
2020/12 - IEEE EDS IEEE EDS Leo Esaki Award Ferroelectric HfO2 Tunnel Junction Memory with High TER and Multi-level Operation Featuring Metal Replacement Process

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Association Membership(s) (3)：

IEEE Electron Device Society , 電子情報通信学会 , 応用物理学会

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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