Research field (4)：
Thin-film surfaces and interfaces
, Crystal engineering
, Applied materials
, Semiconductors, optical and atomic physics
Research theme for competitive and other funds (24)：
2020 - 2024 将来の革新デバイスに向けたBi・Sn媒介GeSnナノドット形成技術の研究
2019 - 2022 Quantum-dots formation in a buried interface by external-electron-energy injection
2017 - 2020 Semimetal (metal) mediated group-IV-semiconductor nanostructure formation and its application for next-generation fundamental device technologies
2015 - 2018 Formation and reaction control of silicon nanostructures by vacuum thermal decomposition
2009 - 2011 Reaction mechanism of nano-scale silicon-insulator thin films by real-time observation
2008 - 2009 新奇量子構造SiGeナノハットおよびナノリングの自己組織的形成
1999 - 2000 リアルタイム光電子分光法によるシリコン熱酸化過程の研究
1998 - 2000 Developmental Research of an Apparatus for In-line Monitoring of Contamination on Si Wafer Surface
1997 - 1999 Surface chemistry of hydrogen on Si surfaces
1998 - 1998 赤外反射分光法による半導体電極-溶液界面反応機構の研究
1997 - 1998 リアルタイム光電子分光による半導体表面準位の新解析法
1997 - 1997 赤外反射分光法による半導体電極-溶液界面反応機構の研究
1995 - 1996 In-situ Observation of Atomic Layr Epitaxy by Photoelectron Oscillation
1994 - 1996 Fabrication of Multi-Layred Thin Film Structure by Photo-induced Catalytic Reactions of Organometallic Compounds
1994 - 1996 The Study of Synchrotron-Radiation-Stimulated Surface Chemical Reactiions on Semiconductors by Surface Electron Spectroscopy
1993 - 1995 Development of Atomic-Scale, Infrared Reflection Spectroscopic Techniques for Characterization of Semiconductor Surfaces
1993 - 1993 角度分解光電子強度の周期的振動による単原子層結晶成長制御に関する研究
1991 - 1993 Low-Temperature Deposition of Dielectric Films Using Synchrotron Radiation-Assisted Gas-Source CVD
Si表面初期窒化過程
Si表面初期酸化過程
半導体結晶成長に関する研究
Initial nitridation process at Siourfaces
Initial oxidation process at Si surfaces
Study on Semiconductor Epitaxial Growth
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Papers (61)：
Tatsuya Nishida, Masayoshi Sato, Yoshiharu Enta, Yushi Suzuki, Yasuyuki Kobayashi, Hideki Nakazawa. Photovoltaic and mechanical properties of boron carbide films prepared by magnetron sputtering. Japanese Journal of Applied Physics. 2024. 63. 1. 01SP38-1-01SP38-12
Yuya Sasaki, Hiroya Osanai, Yusuke Ohtani, Yuta Murono, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa. Influence of hydrogen gas flow ratio on the properties of silicon- and nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition. Diamond and Related Materials. 2022. 108878-108878
K. Nakamura, H. Ohashi, Y. Enta, Y. Kobayashi, Y. Suzuki, M. Suemitsu, H. Nakazawa. Effects of silicon doping on the chemical bonding states and properties of nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition. Thin Solid Films. 2021. 736. 138923-138923
西田竜也, 谷口颯, 佐藤聖能, 小林康之, 遠田義晴, 鈴木裕史, 吹留博一, 中澤日出樹. Effect of Hydrogen on the Properties of Boron Carbide Films Prepared by Magnetron Sputtering. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2022. 83rd
