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J-GLOBAL ID：201101081522788615 Update date: Jan. 30, 2024

Kajikawa Yasutomo

カジカワヤストモ | Kajikawa Yasutomo

Affiliation and department：
Homepage URL (1)： http://www.ecs.shimane-u.ac.jp/~kajikawa/

Research field (1)： Electric/electronic material engineering

Research keywords (1)：半導体工学

Research theme for competitive and other funds (6)：

2005 - 2006 Research on materials for infrared semiconductor lasers used for detecting pollution gases
1998 - 2000 LONG-WAVELENGTH SEMICONDUCTOR LASERS FABRICATED ON GaAs SUBSTRATES USING NEW III-V ALLOYS
Spectroscopic Study on Deep Levels in III-V Compound Semiconductors
Study on Optical Properties of Semiconductor Quantum Structures
Study on Epitaxial Growth of Semiconductors

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Papers (3)：

MISC (74)：

Y. Kajikawa, M. Nishigaichi, S. Tenma, K. Kato, S. Katsube. Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness. Journal of Applied Physics. 2018. 123. 16. 16593_1-7
Y. Kajikawa. Reappraisal of conduction and Hall effect due to impurity Hubbard bands in weakly compensated n-GaAs. Physica Status Solidi B. 2018. 255. 8. 1800063
Y. Kajikawa, Y. Son, H. Hayase, H. Ichiba, R. Mori, K. Ushirogouchi, M. Irie. Suppression of twin generation in the growth of GaAs on Ge (111) substrates. JOURNAL OF CRYSTAL GROWTH. 2017. 477. 1. 40-44
Yasutomo Kajikawa. Analysis of low-temperature data of Hall-effect measurements on p-type InP using a small-polaron theory. Physica Status Solidi (C) Current Topics in Solid State Physics. 2017. 14. 3-4. 1600217-12
Yasutomo Kajikawa. Analysis of low-temperature data of Hall-effect measurements on Ga-doped p-Ge on the basis of an impurity-Hubbard-band model. Physica Status Solidi (C) Current Topics in Solid State Physics. 2017. 14. 3-4. 1700071-9

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Patents (3)：

半導体装置の製造方法
半導体装置,および半導体装置の製造方法
Ge(111)面上へのGaAs層形成方法およびタンデム型太陽電池

Books (2)：

結晶工学スクールテキスト(第7版)結晶工学の基礎
応用物理学会 2004
Suppression of degradation in crystalline quality of InGaAs/(Al)GaAs strained quantum-well structures by increasing the barrier thickeness(joitnly worked)
Institute of Physics Conference Series No. 145, Institute of Physics Publishing 1996

Lectures and oral presentations (58)：

Ge(111)微傾斜基板上へのGaSbのMBE成長におけるBiサーファクタントの効果
(第1回結晶工学xISYSE 合同研究会 2018)
n形GaAsにおける不純物伝導のハバードバンドモデルによる解析
(2018年春季応用物理学会 2018)
M. Nishigaichi, S. Tenma, K. Kato, S. Katsube, Y. Kajikawa
(The 29th International Conference on Defects in Semiconductors (ICDS2017) 2017)
p型InPおよびGaN中の最近接ホッピング伝導に対するホール因子
(2016年春季応用物理学会 2016)
MnドープGaAs中のの最近接ホッピング伝導に対するホール因子
(2016年春季応用物理学会 2016)

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Education (2)：

- 1981 The University of Tokyo
- 1979 The University of Tokyo The Faculty of Engineering

Professional career (1)：

Doctor (Engineering) (The University of Tokyo)

Work history (9)：

1997 - 2006 教授2006年~助教授1997年~2006年北海道大学客員助教授三菱電機株式会社光技術研究開発株式会社
1996 - 1997 Hokkaido University, Associate Professor
1994 - 1997 Mitsubishi Electric Corp., Optoelectronic
1988 - 1994 Optoelectronics Technology Research Corp.,
1981 - 1988 Mitsubishi Electric Corp., LSI Laboratory, Researcher

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Committee career (1)：

2005 - 2018 応用物理学会中国四国支部幹事

Association Membership(s) (2)：

日本物理学会 , 応用物理学会

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