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J-GLOBAL ID:201401000323827700   Update date: Sep. 26, 2024

Mori Takahiro

モリ タカヒロ | Mori Takahiro
Affiliation and department:
Homepage URL  (1): https://staff.aist.go.jp/mori-takahiro/
Research field  (5): Electric/electronic material engineering ,  Electronic devices and equipment ,  Nano/micro-systems ,  Nanomaterials ,  Applied materials
Research keywords  (8): 2D atomically thin materials ,  Silicon Semiconductor Devices ,  Isoelectronic Trap ,  Tunnel Field-Effect Transistor ,  カーボンナノチューブ ,  電子デバイス ,  単電子トランジスタ ,  電子線リソグラフィ
Research theme for competitive and other funds  (5):
  • 2017 - 2020 Creation of spin-coupling technology suitable for Si quantum bit integration
  • 2016 - 2019 Quantum-dot devices in silicon-based tunnel field-effect transistors
  • 2015 - 2018 Invention of new functional devices with trap engineering of tunnel field-effect transistors
  • 2014 - 2016 Development of exciton laser with two-dimensional layered atomically thin films
  • 2008 - 2009 Development of carbon nanotube single electron transistors toward single electron circuits
Papers (119):
  • Satoshi Moriyama, Takahiro Mori, Keiji Ono. Resonant tunneling and quantum interference of a two-spin system in silicon tunnel FETs. Applied Physics Express. 2023. 16. 11. 114001-114001
  • Hidehiro Asai, Shota IIZUKA, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori. Device structure and fabrication process for silicon spin qubit realizing process-variation-robust SWAP gate operation. Japanese Journal of Applied Physics. 2023. 62. {SC}
  • Yoshisuke Ban, Kimihiko Kato, Shota IIZUKA, Shigenori Murakami, Koji Ishibashi, Satoshi Moriyama, Takahiro Mori, Keiji Ono. Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit. Japanese Journal of Applied Physics. 2023. 62. {SC}
  • Kimihiko Kato, Yongxun Liu, Shigenori Murakami, Yukinori Morita, Takahiro Mori. Electron beam lithography with negative tone resist for highly integrated silicon quantum bits. Nanotechnology. 2021. 32. 48. 485301-485301
  • Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori. Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: Implementable in error-correctable large-scale quantum computers. IEEE Symposium on VLSI Circuits, Digest of Technical Papers. 2021. 2021-June
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MISC (125):
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Patents (5):
Education (2):
  • 2001 - 2006 Tohoku University Graduate School of Engineering Department of Applied Physics
  • 1997 - 2001 Tohoku University School of Engineering Department of Applied Physics
Professional career (1):
  • 博士(工学)
Work history (4):
  • 2013/04 - 現在 National Institute of Advanced Industrial Science and Technology Researcher
  • 2011/04 - 2013/03 National Institute of Advanced Industrial Science and Technology Researcher
  • 2009/06 - 2011/03 National Institute of Advanced Industrial Science and Technology Postdoctoral Researcher
  • 2006/04 - 2009/05 RIKEN Postdoctoral Researcher
Association Membership(s) (2):
IEEE ,  THE JAPAN SOCIETY OF APPLIED PHYSICS
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