Rchr
J-GLOBAL ID:200901015819334892   Update date: May. 22, 2020

Yagi Shuhei

ヤギ シユウヘイ | Yagi Shuhei
Affiliation and department:
Homepage URL  (1): http://opt.eeap.saitama-u.ac.jp/index.html
Research field  (1): Electric/electronic material engineering
Research keywords  (3): High Efficiency Solar Cells ,  Crystal Growth ,  Semiconductor Engineering
Research theme for competitive and other funds  (1):
  • -
Papers (37):
  • Md. D. haque, N. Kamata, A.Z.M. T. Islam, Z. Honda, S. Yagi, H. Yaguchi. Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N delta-doped superlattice structure. Optical Materials. 2019. 89. 521-527
  • Akiyama, Yuki, Tachibana, Hiroaki, Azumi, Reiko, Miyadera, Tetsuhiko, Chikamatsu, Masayuki, Koganezawa, Tomoyuki, Yagi, Shuhei, Yaguchi, Hiroyuki. Effects of solvent vapor annealing on organic photovoltaics with a new type of solution-processable oligothiophene-based electronic donor material. JAPANESE JOURNAL OF APPLIED PHYSICS. 2018. 57. 8
  • Takamiya, Kengo, Yagi, Shuhei, Yaguchi, Hiroyuki, Akiyama, Hidefumi, Shojiki, Kanako, Tanikawa, Tomoyuki, Katayama, Ryuji. Biexciton Emission From Single Quantum-Confined Structures in N-Polar (000-1) InGaN/GaN Multiple Quantum Wells. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 2018. 255. 5
  • Haque, Md. Dulal, Kamata, Norihiko, Fukuda, Takeshi, Honda, Zentaro, Yagi, Shuhei, Yaguchi, Hiroyuki, Okada, Yoshitaka. Nonradiative recombination centers in GaAs:N delta-doped superlattice revealed by two-wavelength-excited photoluminescence. JOURNAL OF APPLIED PHYSICS. 2018. 123. 16
  • Keisuke Matsuoka, Shuhei Yagi, Hiroyuki Yaguchi. Growth of InN/GaN dots on 4H-SiC(0001) 4° off vicinal substrates by molecular beam epitaxy. Journal of Crystal Growth. 2017. 477. 201-206
more...
MISC (93):
  • 塚原悠太, 八木修平, 矢口裕之. 第一原理計算によるGaAsN混晶中のN原子配置のバンド構造への影響の検討. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2018. 79th. ROMBUNNO.18p-234B-6
  • 高橋渉, 高宮健吾, 八木修平, 狭間優治, 秋山英文, 矢口裕之, 鎌田憲彦. 二波長励起PL測定によるGaPN混晶のアップコンバージョン発光特性評価. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2018. 79th. ROMBUNNO.18p-234B-4
  • 大倉一将, 高宮健吾, 八木修平, 矢口裕之. 規則配列化InNドットの作製に向けた立方晶GaN表面ステップ構造の成長条件依存性. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2018. 79th. ROMBUNNO.19p-PA4-25
  • 杉浦亮, 高宮健吾, 八木修平, 矢口裕之. RF-MBE成長による4H-SiC(000-1)基板上へのN極性GaNの作製. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2018. 79th. ROMBUNNO.19p-PA4-14
  • 五十嵐大輔, 高宮健吾, 伊藤隆, 八木修平, 秋山英文, 矢口裕之. MBE成長したErドープGaAsの発光特性に対するアニーリングの影響. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2018. 65th. ROMBUNNO.18p-P8-12
more...
Education (3):
  • 2001 - 2004 Tokyo Institute of Technology Graduate School, Division of Science and Engineering Department of Physical Electronics
  • 1999 - 2001 Tokyo Insititute of Technology Graduate School, Division of Science and Engineering Department of Physical Electronics
  • 1997 - 1999 The University of Electro-Communications Faculty of Electro Communications Department of Electronics
Professional career (1):
  • Master of Engineering (Tokyo Institute of Technology)
Work history (8):
  • 2015/04 - 現在 Saitama University Associate Professor
  • 2010/04 - 2015/03 Saitama Univeristy Assistant Professor
  • 2009/04 - 2010/03 The University of Tokyo Project Assistant Professor
  • 2008/04 - 2009/03 The University of Tokyo Project Research Fellow
  • 2007/05 - 2008/03 Tsukuba University Reserch Fellow
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