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J-GLOBAL ID：200902144646176690
Reference number：02A0068088 Study on the lateral growth of silicon films from metal solutions with temperature gradient.
温度勾配をもつ金属溶液からのシリコン薄膜の横方向成長に関する研究
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KITA K
About KITA K
(Univ. Tokyo, Tokyo, JPN)
, About Univ. Tokyo, Tokyo, JPN
WEN C-J
About WEN C-J
(Univ. Tokyo, Tokyo, JPN)
, About Univ. Tokyo, Tokyo, JPN
OTOMO J
About OTOMO J
(Univ. Tokyo, Tokyo, JPN)
, About Univ. Tokyo, Tokyo, JPN
YAMADA K
About YAMADA K
(Shinshu Univ., Nagano, JPN)
, About Shinshu Univ., Nagano, JPN
KOMIYAMA H
About KOMIYAMA H
(Univ. Tokyo, Tokyo, JPN)
, About Univ. Tokyo, Tokyo, JPN
TAKAHASHI H
About TAKAHASHI H
(Univ. Tokyo, Tokyo, JPN)
About Univ. Tokyo, Tokyo, JPN
Material：
Journal of Crystal Growth
(J Cryst Growth)
About Journal of Crystal Growth
Volume： 234 Issue： 1 Page： 153-158 Publication year： Jan. 2002
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type： 原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)
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On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
Computer Simulation
,...
About Computer Simulation
JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films
Category name(code) classified by JST.
(BK14040E)
About Semiconductor thin films
Terms in the title (5)：
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Keywords automatically extracted from the title.
温度勾配
, About 温度勾配
溶液
, About 溶液
シリコン薄膜
, About シリコン薄膜
横方向成長
, About 横方向成長
研究
About 研究
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