Art

J-GLOBAL ID：200902151319072489   Reference number：01A0078752

Chemical Vapor Deposition Based Preparation on Porous Silica Films.

多孔質シリカ膜のCVD法による作製

Author (4)： UCHIDA Y (Teikyo Univ. Sci. and Technol., Yamanashi, JPN) ,  KATOH T (Teikyo Univ. Sci. and Technol., Yamanashi, JPN) ,  SUGAHARA S (Tokyo Inst. Technol, Tokyo, JPN) ,  MATSUMURA M (Tokyo Inst. Technol, Tokyo, JPN)
Material： Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)
Volume： 39  Issue： 11B  Page： L1155-L1157  Publication year： Nov. 15, 2000 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *porous medium ,...
Semi thesaurus term： *silica ,...

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0078752&from=J-GLOBAL&jstjournalNo=F0599B") }}

JST classification (1)： Oxide thin films  (BK14050P)

Substance index (2)： Trimethylamine ,  Bis(dimethylamino)diphenylsilane

Reference (9)：

• 1) D. Tobben, P. Weigand, M. J. Shapiro and S. A. Cohen: Mater. Res. Soc. Symp. Proc. 443 (1997) 195.
• 2) C. Jin, S. List and E. Zielinski: Mater. Res. Soc. Symp. Proc. 511 (1998) 213.
• 3) T. Ramos, K. Rhoderick, R. Roth, L. Brungardt, S. Wallace, J. Drage, J. Dunne, D. Endisch, R. Katsanes, N. Viernes and D. M. Smith: Mater. Res. Soc. Symp. Proc. 511 (1998) 105.
• 4) Y. Uchida, S. Takei and M. Matsumura: Jpn. J. Appl. Phys. 36 (1997) 1509.
• 5) Y. Uchida, K. Taguchi, T. Nagai, S. Sugahara and M. Matsumura: Jpn. J. Appl. Phys. 37 (1998) 6369.

Terms in the title (4)： 多孔質 ,  シリカ膜 ,  CVD法 ,  作製