Art

J-GLOBAL ID：200902266835595805   Reference number：06A0330934

Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching

中性ビームエッチングを使用した垂直チャネルダブルゲート金属-酸化物-半導体電界効果トランジスタの製作

Author (14)： ENDO Kazuhiko (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  NODA Shuichi (Tohoku Univ., Sendai, JPN) ,  MASAHARA Meishoku (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  KUBOTA Tomohiro (Tohoku Univ., Sendai, JPN) ,  OZAKI Takuya (Tohoku Univ., Sendai, JPN) ,  SAMUKAWA Seiji (Tohoku Univ., Sendai, JPN) ,  LIU Yongxun (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ISHII Kenichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ISHIKAWA Yuki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  SUGIMATA Etsuro (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MATSUKAWA Takashi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  TAKASHIMA Hidenori (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  YAMAUCHI Hiromi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  SUZUKI Eiichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)
Volume： 45  Issue： 8-11  Page： L279-L281  Publication year： Mar. 25, 2006 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *MOSFET ,...
Semi thesaurus term： FinFET ,...

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=06A0330934&from=J-GLOBAL&jstjournalNo=F0599B") }}

JST classification (2)： Transistors  (NC03070N) ,  Manufacturing technology of solid-state devices  (NC03030V)

Reference (10)：

• SEKIGAWA, T. Solid State Electron. 1984, 27, 827
• MASAHARA, M. IEEE Trans. Electron Devices. 2004, 51, 2078
• LIU, Y. IEEE Electron Device Lett. 2004, 25, 510
• HISAMOTO, D. IEEE Trans. Electron Devices. 2000, 47, 2320
• OEHRLEIN, G. S. Appl. Phys. Lett. 1984, 45, 420

Terms in the title (7)： 中性ビーム ,  エッチング ,  垂直チャネル ,  ダブルゲート ,  酸化物 ,  電界効果トランジスタ ,  製作