Rchr
J-GLOBAL ID：201401000323827700
Update date: Jan. 31, 2024
Mori Takahiro
モリ タカヒロ | Mori Takahiro
Affiliation and department：
Homepage URL (1)：
https://staff.aist.go.jp/mori-takahiro/
Research field (5)：
Electric/electronic material engineering
, Electronic devices and equipment
, Nano/micro-systems
, Nanomaterials
, Applied materials
Research keywords (8)：
2D atomically thin materials
, Silicon Semiconductor Devices
, Isoelectronic Trap
, Tunnel Field-Effect Transistor
, カーボンナノチューブ
, 電子デバイス
, 単電子トランジスタ
, 電子線リソグラフィ
Research theme for competitive and other funds (5)：
- 2017 - 2020 Creation of spin-coupling technology suitable for Si quantum bit integration
- 2016 - 2019 Quantum-dot devices in silicon-based tunnel field-effect transistors
- 2015 - 2018 Invention of new functional devices with trap engineering of tunnel field-effect transistors
- 2014 - 2016 Development of exciton laser with two-dimensional layered atomically thin films
- 2008 - 2009 Development of carbon nanotube single electron transistors toward single electron circuits
Papers (114)：
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Hidehiro Asai, Shota IIZUKA, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori. Device structure and fabrication process for silicon spin qubit realizing process-variation-robust SWAP gate operation. Japanese Journal of Applied Physics. 2023. 62. {SC}
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Yoshisuke Ban, Kimihiko Kato, Shota IIZUKA, Shigenori Murakami, Koji Ishibashi, Satoshi Moriyama, Takahiro Mori, Keiji Ono. Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit. Japanese Journal of Applied Physics. 2023. 62. {SC}
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Kimihiko Kato, Yongxun Liu, Shigenori Murakami, Yukinori Morita, Takahiro Mori. Electron beam lithography with negative tone resist for highly integrated silicon quantum bits. Nanotechnology. 2021. 32. 48. 485301-485301
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Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori. Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: Implementable in error-correctable large-scale quantum computers. IEEE Symposium on VLSI Circuits, Digest of Technical Papers. 2021. 2021-June
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Kimihiko Kato, Hidehiro Asai, Koichi Fukuda, Takahiro Mori, Yukinori Morita. Si bilayer tunnel field-effect transistor structure realized using tilted ion-implantation technique. SOLID-STATE ELECTRONICS. 2021. 180
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MISC (125)：
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Hiroshi Oka, Wataru Mizubayashi, Yuki Ishikawa, Noriyuki Uchida, Takahiro Mori, Kazuhiko Endo. Flash lamp annealing processing to improve the performance of high-Sn content GeSn n-MOSFETs. Applied Physics Express. 2021. 14. 9
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浅井栄大, 飯塚将太, 服部淳一, 池上努, 福田浩一, 森貴洋. Theoretical Analysis of capacitance of semiconductor quantum dot device utilizing TCAD. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2020. 67th
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飯塚将太, 浅井栄大, 加藤公彦, 服部淳一, 福田浩一, 森貴洋. Mechanism of Gate-Length Dependence of Quantum Dot Operation in Isoelectronic-Trap-Assisted Tunnel FETs. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2020. 81st
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浅井栄大, 森貴洋, 松川貴, 服部淳一, 遠藤和彦, 福田浩一. Trimmed Gate型TFETにおける超急峻スイッチング特性. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2018. 79th. ROMBUNNO.21a-CE-2
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福田浩一, 浅井栄大, 服部淳一, 森貴洋, 森田行則, 昌原明植, 右田真司, 太田裕之, 遠藤和彦, 松川貴. TFETの短チャネル効果と界面ポテンシャル. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2018. 79th. ROMBUNNO.21p-PB3-1
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Patents (5)：
Education (2)：
- 2001 - 2006 Tohoku University Graduate School of Engineering Department of Applied Physics
- 1997 - 2001 Tohoku University School of Engineering Department of Applied Physics
Professional career (1)：
Work history (4)：
- 2013/04 - 現在 National Institute of Advanced Industrial Science and Technology Researcher
- 2011/04 - 2013/03 National Institute of Advanced Industrial Science and Technology Researcher
- 2009/06 - 2011/03 National Institute of Advanced Industrial Science and Technology Postdoctoral Researcher
- 2006/04 - 2009/05 RIKEN Postdoctoral Researcher
Association Membership(s) (2)：
IEEE
, THE JAPAN SOCIETY OF APPLIED PHYSICS
