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J-GLOBAL ID：200902160345904629
Reference number：99A0046862 Role of Dislocation in InGaN Phase Separation.
InGaN相分離における転位の効果
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SUGAHARA T
About SUGAHARA T
(Univ. Tokushima, Tokushima, JPN)
, About Univ. Tokushima, Tokushima, JPN
HAO M
About HAO M
(Univ. Tokushima, Tokushima, JPN)
, About Univ. Tokushima, Tokushima, JPN
WANG T
About WANG T
(Univ. Tokushima, Tokushima, JPN)
, About Univ. Tokushima, Tokushima, JPN
NAKAGAWA D
About NAKAGAWA D
(Univ. Tokushima, Tokushima, JPN)
, About Univ. Tokushima, Tokushima, JPN
NAOI Y
(Univ. Tokushima, Tokushima, JPN)
, About Univ. Tokushima, Tokushima, JPN
NISHINO K
About NISHINO K
(Univ. Tokushima, Tokushima, JPN)
, About Univ. Tokushima, Tokushima, JPN
SAKAI S
About SAKAI S
(Univ. Tokushima, Tokushima, JPN)
About Univ. Tokushima, Tokushima, JPN
Material：
Japanese Journal of Applied Physics. Part 2. Letters
(Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)
About Japanese Journal of Applied Physics. Part 2. Letters
Volume： 37 Issue： 10B Page： L1195-L1198 Publication year： Oct. 15, 1998
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type： 短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*cathodoluminescence
,...
About cathodoluminescence
JST classification (2)：
JST classification
Category name(code) classified by JST.
Luminescence of semiconductors
Category name(code) classified by JST.
(BM08092S)
, Lattice defects in semiconductors
About Luminescence of semiconductors
(BK12040Q)
About Lattice defects in semiconductors
Reference (14)：
- 1) S. Nakamura, T. Mukai and M. Senoh: J. Appl. Phys. 76 (1994) 8189
- 2) S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama: Jpn. J. Appl. Phys. 34 (1995) L797
- 3) S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada and T. Mukai: Jpn. J. Appl. Phys. 34 (1995) 1332
- 4) K. Itaya, M. Onomura, J. Nishino, L. Sugiura, S. Saito, M. Suzuki, J. Rennie, S. Nunoue, M. Yamamoto, H. Fujimoto, Y. Kokubun and Y. Ohba: Jpn. J. Appl. Phys. 35 (1996) L1315
- 5) S. D. Lester, F. A. Ponce, M. G. Craford and D. A. Steigerwald: Appl. Phys. Lett. 66 (1995) 1249
Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
Keywords automatically extracted from the title.
InGaN
, About InGaN
相分離
, About 相分離
転位
About 転位
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