Art

J-GLOBAL ID：201702290490847116   Reference number：17A0716240

Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasmaenhanced CVD without substrate heating

基板加熱なしのECR ArプラズマCVDで成長したB原子層ドープSi膜のキャリア特性

Author (5)： SAKURABA Masao (Tohoku Univ., Sendai, JPN) ,  SUGAWARA Katsutoshi (Tohoku Univ., Sendai, JPN) ,  NOSAKA Takayuki (Tohoku Univ., Sendai, JPN) ,  AKIMA Hisanao (Tohoku Univ., Sendai, JPN) ,  SATO Shigeo (Tohoku Univ., Sendai, JPN)
Material： Science and Technology of Advanced Materials (Web)  (Sci Technol Adv Mater (Web))
Volume： 18  Issue： Apr  Page： 294-306 (WEB ONLY)  Publication year： Apr. 2017 
JST Material Number： U7009A  ISSN： 1878-5514  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： epitaxy ,  chemical vapor deposition ,  *plasma CVD ,  Argon ,  silicon ,  *boron ,  carrier mobility ,  Hall effect ,  transport phenomenon ,  Thermal Diffusion ,  strain ,  carrier density ,  Coulomb interaction ,  semiconductor thin film ,  *doping ,  carrier transport ,  *silicon thin film ,  tensile strain
Semi thesaurus term： atomic layer deposition ,  silicon ,  Boron

JST classification (1)： Materials of solid-state devices  (NC03020K)

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Terms in the title (7)： Ar ,  プラズマCVD ,  成長 ,  原子層 ,  ドープ ,  Si膜 ,  キャリア