Takayoshi Oshima, Yuichi Oshima. Near-vertical plasma-free HCl gas etching on (011) β-Ga2O3. Japanese Journal of Applied Physics. 2025. 64. 1. 018003-018003
Takayoshi Oshima, Masataka Imura, Yuichi Oshima. Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination. Applied Physics Express. 2024. 17. 8. 086501
Takayoshi Oshima, Rie Togashi, Yuichi Oshima. Plasma-free anisotropic selective-area etching of β-Ga2O3 using forming gas under atmospheric pressure. Science and Technology of Advanced Materials. 2024. 25. 1. 2378683
Takayoshi Oshima, Yuichi Oshima. Using selective-area growth and selective-area etching on (-102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches. Applied Physics Letters. 2024. 124. 4. 042110