齋藤渉

サイトウワタル | Saito Wataru

所属機関・部署：
職名：教授
ホームページURL (1件)： https://www.riam.kyushu-u.ac.jp/ece/SAITO_group/index.html

研究分野 (1件)：電子デバイス、電子機器

研究キーワード (3件)：パワーデバイス制御 , パワーモジュール , パワー半導体デバイス

競争的資金等の研究課題 (1件)：

論文 (111件)：

Toshiaki Inuma, Dibo Zhang, Katsuhiro Hata, Kazuto Mikami, Kenji Hatori, Koji Tanaka, Wataru Saito, Makoto Takamiya. Digital Active Gate Driving Automatically Minimizing Switching Loss While Keeping Surge Current Below User-Specified Target. 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia). 2024
Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shin-ichi Nishizawa, Wataru Saito. Mechanism of gate voltage spike under digital gate control at IGBT switching operations. Power Electronic Devices and Components. 2024. 7. 100054-100054
Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Takayasu Sakurai, Shin-Ichi Nishizawa, Wataru Saito. Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN). IEEE Access. 2024. 12. 96936-96945
Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa. Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping. IEEE Open Journal of Power Electronics. 2024. 5. 392-401
Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa. Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker. Microelectronics Reliability. 2023. 150. 115119-115119

MISC (4件)：

特許 (82件)：

書籍 (4件)：

講演・口頭発表等 (99件)：

Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker
(34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2023)
A simple sensor device for power cycle degradation sensing
(34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2023)
Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module
(34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2023)
Restoration of Degraded Reverse Bias Safety Operating Area (RBSOA) in 3300V Scaled IGBTs by Non-Proportional Scaling Method
(2023 International Conference on Solid State Devices and Materials (SSDM) 2023)
Study on Stress in Trench Structures during Silicon IGBTs Process - Oxidation
(2023 International Conference on Solid State Devices and Materials (SSDM) 2023)

学歴 (3件)：

学位 (1件)：

経歴 (3件)：

委員歴 (20件)：

2019/11 - 現在 IEEE Transaction on Electron Devices Editorial Board
2018/06 - 現在電子情報通信学会電子デバイス研究会
2017/04 - 現在電気学会電子デバイス技術委員会
2010/12 - 現在電子情報通信学会 Technical Workshop on Heterostructure Microelectronics (TWHM) プログラム委員会
2020/04 - 2021/12 IEEE IEDM Power Device and Systems (PDS) sub-committee

全件表示

所属学会 (5件)：

NPERC-J , IEEE , 電子情報通信学会 , 応用物理学会 , 電気学会

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齋藤 渉