Rchr
J-GLOBAL ID:200901025733562138   Update date: May. 16, 2024

Naritsuka Shigeya

ナリツカ シゲヤ | Naritsuka Shigeya
Affiliation and department:
Research field  (4): Electronic devices and equipment ,  Electric/electronic material engineering ,  Crystal engineering ,  Applied materials
Research theme for competitive and other funds  (38):
  • 2019 - 2023 Study on ultrashort pulsed semiconductor laser diodes for fluorescent bio-imaging
  • 2019 - 2023 Operando EXAFS study on growth mechanism of carbon nanotube
  • 2015 - 2020 Basic research for realization of heteroepitaxial growth platform
  • 2014 - 2019 Invention of 3D Active sites in Advanced Semiconductors and Functional Materials
  • 2014 - 2017 Growth of GaN template substrate by flow-assisted-mode liquid phase epitaxy
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Papers (141):
  • Shigeya Naritsuka, Yukio Kato, Masami Nonogaki, Ryoya Yokoi, Kohei Osamura, Yuta Yanase, Takahiro Maruyama. A-plane GaN microchannel epitaxy on r-plane sapphire substrate using patterned graphene mask. Journal of Crystal Growth. 2024. 630
  • Shusaku Karasawa, Takahiro Saida, Kamal Prasad Sharma, Shigeya Naritsuka, Takahiro Maruyama. Single-walled carbon nanotube growth from Ni catalyst particles under conventional growth conditions by alcohol catalytic chemical vapor deposition: in situ X-ray absorption fine structure study. Japanese Journal of Applied Physics. 2023. 62. SG
  • Shusaku Karasawa, Kamal Prasad Sharma, Takahiro Saida, Shigeya Naritsuka, Yuichi Haruyama, Toru Asaka, Takahiro Maruyama. In situ XAFS study on chemical states of Co and Ir nanoparticles under conventional growth condition of single-walled carbon nanotube via alcohol catalytic chemical vapor deposition. Chemical Physics Letters. 2022. 808. 140135-140135
  • Asato Nakashima, Tomoaki Murahashi, Ryosuke Achiwa, Tatsuya Kashio, Takahiro Maruyama, Shigeya Naritsuka. Direct precipitation of multilayer graphene on c-plane sapphire using a crystallized Ni catalyst. Journal of Crystal Growth. 2022. 598. 126885-126885
  • Shusaku Karasawa, Kamal Prasad Sharma, Daiki Yamamoto, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama. In situ XAFS study of the chemical state of a Co catalyst during single-walled carbon nanotube growth under conventional growth conditions using alcohol catalytic chemical vapor deposition. CHEMICAL PHYSICS LETTERS. 2022. 804
more...
MISC (483):
  • Niwa Kazuki, Fukami Takeshi, Nonogaki Masami, Kato Yukito, Ueda Yuki, Maruyama Takahiro, Naritsuka Shigeya. Growth temperature dependence of GaN nucleation on graphene/r-plane sapphire template. JSAP Annual Meetings Extended Abstracts. 2021. 2021.1. 2609-2609
  • Yamamoto Daiki, Kamal Sharma, Saida Takahiro, Narituka Shigeya, Maruyama Takahiro. Growth temperature dependence of SWCNT growth on SiO2/Si substrates by ACCVD using Ir catalyst. JSAP Annual Meetings Extended Abstracts. 2021. 2021.1. 2806-2806
  • Fukami Takeshi, Niwa Kazuki, Kobayashi Yuta, Maruyama Takahiro, Naritsuka Shigeya. Direct growth of multilayer graphene nucleation on insulating substrate using Ga-Ni solution. JSAP Annual Meetings Extended Abstracts. 2021. 2021.1. 2845-2845
  • Murahashi Tomoaki, Nakashima Asato, Maruyama Takahiro, Naritsuka Shigeya. Quality improvement of precipitated graphene using crystallized Ni layer. JSAP Annual Meetings Extended Abstracts. 2021. 2021.1. 2865-2865
  • Kashio Tatsuya, Fukami Takeshi, Niwa Kazuki, Nakashima Asato, maruyama Takahiro, Naritsuka Shigeya. In-situ X-ray diffraction analysis of graphene direct precipitation growth using nanodiamonds -- catalysis thickness dependence --. JSAP Annual Meetings Extended Abstracts. 2021. 2021.1. 2856-2856
more...
Patents (25):
Books (11):
  • Chapter Four - Microchannel epitaxy of III-V layers on Si substrates Semiconductors and Semimetals, Vol. 101
    Elsevier Ltd. 2019
  • Initial Growth Process of Carbon Nanotubes in Surface Decomposition of SiC
    In Tech Co. 2011
  • 新インターユニバーシティ 「固体電子物性」
    オーム社 2009
  • Carbon Nanotube Growth by Surface Decomposition of SiC
    NOVA Science Publishers 2009
  • 薄膜ハンドブック(第2版)
    2008
more...
Works (4):
  • 化合物半導体発光素子の高速化
    2001 -
  • Study of light emitting device of compound semiconductor
    2001 -
  • Si基板上のInP無転位横方向成長の研究
    1997 -
  • Study of dislocation free InP lateral growth on Si substrate
    1997 -
Education (3):
  • 1993 - 1996 The University of Tokyo The Graduate School of Engineering
  • 1979 - 1981 Tokyo Institute of Technology Interdisciplinary Graduate School of Science and Engineering
  • 1975 - 1979 Nagoya Institute of Technology Faculty of Engineering
Professional career (2):
  • Doctor of Engineering (The University of Tokyo)
  • Master of Engineering (Tokyo Institute of Technology)
Committee career (1):
  • 1997 - 日本結晶成長学会 理事
Association Membership(s) (4):
日本物理学会 ,  日本結晶成長学会 ,  応用物理学会 ,  フラーレン・ナノチューブ・グラフェン学会
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