Rchr
J-GLOBAL ID：200901085346242080
Update date: Jul. 17, 2024
Suda Yoshiyuki
スダ ヨシユキ | Suda Yoshiyuki
Affiliation and department：
Job title：
Professor
Research field (4)：
Electronic devices and equipment
, Electric/electronic material engineering
, Nano/micro-systems
, Nanomaterials
Research keywords (18)：
単電子回路
, 単電子デバイス
, 太陽電池
, 薄膜デバイス
, メゾスコピックデバイス
, 量子効果デバイス
, FETデバイス
, メモリデバイス
, 半導体エピタキシー
, Single Electron Circuit
, Single Electron Device
, Solar Battery
, Thin Film Device
, Mesoscopic Device
, Quantum Effect Device
, FET Device
, Memory Device
, Semiconductor Epitaxy
Research theme for competitive and other funds (27)：
- 2019 - 2022 Development of high-frequency devices using GeSiSn/GeSn quantum wells
- 2017 - 2020 High-performance Si/SiGe RTD with fully compressively strained SiGe of high Ge composition ratio formed by sputtering method
- 2016 - 2019 Investigation of high performance transfer free graphene device with transistor and memory operation
- 2014 - 2017 Development of memory diode and its application to densest array memory
- 2013 - 2015 Technology of Formation of Ge Virtual Substrates by Growth of Ge Flat Films Directly on Si Using Sputter Epitaxy Method
- 2011 - 2012 Technology of Formation of Ge Flat Film Directly on Si by P SurfactantEffect and Sputter Epitaxy Method
- 2009 - 2011 High-Density New Two-Terminal Resistive Nonvolatile Memory Using SiC and Its Integration Technology
- 2009 - 高効率太陽電池
- 2007 - 2008 High-Density New Two-Terminal Resistive Nonvolatile MemoryUsing Silicon Carbide
- 2002 - 2004 Si/SiGe系共鳴トンネルデバイスと集積化技術
- 2002 - 2004 Si/SiGe Multi-barrier Tunneling Diode and its Integration Technology
- 2002 - 2004 Si/SiGe Multiple-Barrier Resonant Tunneling Diode and Its Integrated Technology
- 2004 - SiGe系ヘテロ構造高速FET系デバイス
- 2003 - SiGe環境軽負荷型高速先進デバイス技術
- 2002 - 位置を人為的に制御したGeドットアレイと光・フォトニックデバイスへの応用
- 2002 - Artificially Sized and Positioned Ge Dot Array and its Application to Photonic Devices
- 2000 - 2001 Si/SiGe Multiple-Quantum-well Resonant Tunneling Device
- 1998 - 1999 Development and Photonic Integration of Efficient and Stable Silicon-Based LED
- 1996 - 1997 Sub-Atomic-Layr Epitaxy of Si/Ge Semiconductors
- 1995 - 1997 Study of Visible Luminescence Mechanism in Porous Silicon and Its Devvelopment into Silicon-Based Optoelectronic Integration
- 1995 - 単電子論理回路と単電子センサーデバイス
- 1995 - 新型メモリデバイス
- 1992 - 1993 Study on electron-beam-induced excitation on Si surfaces
- 1992 - 1992 多孔質シリコンの可視域発光に関する基礎的研究
- Geドットアレイ形成技術と通信波長帯発光デバイスとフォトニック材料・デバイスへの応用
- IV族半導体スパッタ-エピタキシー技術と高速トランジスタへの応用技術
- 新型抵抗変化型不揮発性高密度メモリの開発
Show all
Papers (38)：
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Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda. Direct Growth of Patterned Ge on Insulators Using Graphene. Journal of Physical Chemistry C. 2021. 125. 25. 14117-14121
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Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda. Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy. Thin Solid Films. 2021. 726
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Ayaka Shinkawa, Minoru Wakiya, Yuki Maeda, Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda. Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission. JAPANESE JOURNAL OF APPLIED PHYSICS. 2020. 59. 8
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Takahiro Tsukamoto, Shota Kurihara, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda. Increase in Current Density at Metal/GeO2/n-Ge Structure by Using Laminated Electrode. ELECTRONIC MATERIALS LETTERS. 2020. 16. 1. 41-46
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Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda. Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth. ELECTRONIC MATERIALS LETTERS. 2020. 16. 1. 9-13
ｍore...
MISC (1)：
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HANAFUSA Hiroaki, SUDA Yoshiyuki, KASAMATSU Akifumi, HIROSE Nobumitsu, MIMURA Takashi, MATSUI Toshiaki. Strain-Relaxed Si_<1-x>Ge_x and Strained Si Grown by Sputter Epitaxy. 2007. 2007. 292-293
Patents (30)：
Works (5)：
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ファームウェア用クロスポイント最密集積型メモリの開発
2008 - 2008
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ファームウェア用クロスポイント最密集積型メモリの開発
2007 - 2008
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須田良幸(東京農工大学)および須原理彦(首都大学東京)の共同研究グループが、次世代のシリコン系超高速量子効果デバイスであるシリコン・ゲルマニウム系ユニポーラ型共鳴トンネルダイオードの室温発振に世界で初めて成功し、日刊工業新聞に掲載(2007年9月4日掲載).
2007 - 2007
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共鳴トンネルダイオード特性の理論的解析
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スパッタエピタキシ法の開発とシリコン系超高速デバイスの創製
Education (6)：
Professional career (2)：
Association Membership(s) (3)：
電気学会
, The Electrochemical Society
, 応用物理学会
