Rchr
J-GLOBAL ID:200901092349858720   Update date: May. 15, 2024

Ishikawa Yasuhiko

イシカワ ヤスヒコ | Ishikawa Yasuhiko
Affiliation and department:
Job title: Research Assistant
Homepage URL  (1): http://www.int.ee.tut.ac.jp/photon/
Research field  (4): Optical engineering and photonics ,  Electronic devices and equipment ,  Electric/electronic material engineering ,  Crystal engineering
Research keywords  (5): epitaxial growth ,  photonic-electronic integration ,  photonic devices ,  silicon germanium ,  silicon photonics
Research theme for competitive and other funds  (34):
  • 2023 - 2026 Novel group-IV nitride films by reactive sputtering as potential nonlinear optical materials in Si photonics
  • 2022 - 2025 高品質グラフェンとシリコンフォトニクスのヘテロ集積によるTHz-光融合
  • 2021 - 2024 On-wafer band engineering for Ge epitaxial layers selectively grown on Si
  • 2018 - 2021 Archtecture of plasmonic logic circuit
  • 2015 - 2020 光信号の低コスト受信モニタリングのための小型光位相同期回路の研究開発
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Papers (206):
  • Abdelrahman Z. Al-Attili, Daniel Burt, Tasmiat Rahman, Zuo Li, Naoki Higashitarumizu, Frederic Y. Gardes, Yasuhiko Ishikawa, Shinichi Saito. Mechanically induced optical loss mechanism due to thermal expansion coefficient mismatch in micro-cavities with all-around stressor layers. APL Photonics. 2024. 9. 5
  • Takumi Maeda, Kota Kato, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Tetsuya Nakai, Yasuhiko Ishikawa. Trench-filling heteroepitaxy of [100]-oriented germanium arrays on (001) silicon substrate. Japanese Journal of Applied Physics. 2024. 63. 3. 03SP29
  • Joshua Chombo, Mohd Faiz Bin Amin, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Keisuke Yamane, Mingjun Jiang, Donghwan Ahn, Kazumi Wada, Yasuhiko Ishikawa. Anti-relaxation of tensile lattice strain in Si-embedded Ge strip structure for photonic device applications. Japanese Journal of Applied Physics. 2024. 63. 3. 03SP32
  • Mohd Faiz Bin Amin, Jose A. Piedra-Lorenzana, Keisuke Yamane, Takeshi Hizawa, Tetsuya Nakai, Yasuhiko Ishikawa. High-quality Ge epitaxial film based on dislocation trapping mechanism in patterned Si substrate. Japanese Journal of Applied Physics. 2023. 63. 2. 02SP78
  • Junichi Fujikata, Masataka Noguchi, Riku Katamawari, Kyosuke Inaba, Hideki Ono, Daisuke Shimura, Yosuke Onawa, Hiroki Yaegashi, Yasuhiko Ishikawa. High-performance Ge/Si electro-absorption optical modulator up to 85°C and its highly efficient photodetector operation. Optics Express. 2023. 31. 6. 10732-10732
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MISC (275):
  • AMIN Mohd Faiz Bin, PIEDRA-LORENZANA Jose A., YAMENE Keisuke, HIZAWA Takeshi, NAKAI Tetsuya, ISHIKAWA Yasuhiko. Ge epitaxial layer grown on V-groove patterned Si substrate. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
  • PIEDRA-LORENZANA Jose A., KANEKO Shohei, FUKUSHIMA Takaaki, YAMANE Keisuke, FUJIKATA Junichi, ISHIKAWA Yasuhiko. AlN Stressor Layer for Ge-on-Si Photonic Devices. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
  • 前田匠海, 加藤滉大, PIEDRA-LORENZANA Jose A., 山根啓輔, 飛沢健, 中井哲弥, 石川靖彦. Effect of trench width on Ge epitaxial growth on Si. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
  • 古家聖輝, 葛谷樹矢, PIEDRA-LORENZANA Jose A., 飛沢健, 山根啓輔, 藤原弘康, 石川靖彦. Effect of Ge Epitaxial Interlayer on Solid-Phase Growth of Ge on Si. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
  • PIEDRA-LORENZANA Jose A., KANEKO Shohei, FUKUSHIMA Takaaki, YAMANE Keisuke, FUJIKATA Junichi, ISHIKAWA Yasuhiko. AlN film by reactive sputtering as a stressor for Ge photonic devices on Si. 電子情報通信学会技術研究報告(Web). 2023. 123. 41(ED2023 1-9)
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Patents (37):
Books (6):
  • Integrated Photonics for Data Communication Applications (Integrated Photonics: Application-Specific Design and Manufacturing)
    2023 ISBN:0323912249
  • 次世代高速通信に対応する光回路実装、デバイスの開発
    技術情報協会 2022
  • Photonics and Electronics with Germanium
    Wiley-VCH, Weinheim 2015
  • Silicon Photonics II (Topics in Applied Physics)
    Springer Verlag 2010
  • Optical Interconnects - The Silicon Approach
    Springer Verlag 2006
more...
Lectures and oral presentations  (396):
  • Franz-Keldysh Effect in Lateral pin Photodetectors of Ge Strip on Si at C-, L-, and U-band Wavelengths
    (2024 IEEE Silicon Photonics Conference 2024)
  • 発光デバイス応用に向けたHfGe混晶の理論的検討
    (第71回応用物理学会春季学術講演会 2024)
  • Effect of Si cap layer on the lattice strain in a Ge wire structures grown on Si substrate
    (第71回応用物理学会春季学術講演会 2024)
  • 引張ひずみを増強したGe層を用いたSi上フリースペース近赤外受光器の特性評価
    (第21回赤外放射応用関連学会年会 2024)
  • CVD Growth of SiGe Layer on Bulk Si for Optical Waveguide Application
    (Photonic Device Workshop 2023 (PDW2023) 2023)
more...
Education (1):
  • - 1998 Hokkaido University Graduate School, Division of Engineering
Professional career (1):
  • (BLANK) (Hokkaido University)
Committee career (39):
  • 2023/04 - 現在 半導体の結晶成長と加工および評価に関する応物産学連携委員会 委員
  • 2019/06 - 現在 電子情報通信学会光集積及びシリコンフォトニクス特別研究専門委員会 委員
  • 2012 - 現在 電子材料シンポジウム プログラム委員
  • 2023/04 - 2025/03 応用物理学会東海支部 幹事
  • - 2024/10 Electrochemical Society 246th ECS Meeting, 11th International SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium, Optoelectronics Committee, Program Committee Member
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Association Membership(s) (6):
The Electrochemical Society ,  SPIE ,  IEEE ,  電子情報通信学会 ,  応用物理学会 ,  Material Research Society
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