Zaima Shigeaki

Research field (1)： Thin-film surfaces and interfaces

Research theme for competitive and other funds (31)：

2014 - 2019 Establishment of Fundamental Engineering of Sn-related Group-IV Semiconductor Materials for Multi-Functional and Low-Power Electronics
2015 - 2018 Synthesis of New Group IV Two Dimensional Materials
2014 - 2015 機能融合デバイス構築に向けたSn系IV族半導体薄膜の材料設計
2010 - 2013 Design of Electronic Properties and Development of High-Mobility Channel Technology for Low Power/High-Speed Nano-CMOS Devices
2009 - 2011 シリコン系エンジニアリングサブストレート実現のための材料・物性・構造制御技術

2006 - 2010 Technology Evolution for Silicon Nano-Electronics

2006 - 2009 Construction of High-k Gate/Strain-engineered Germanium channel Structures with Functional Nano-system

2006 - 2008 Creation of tensile-strained Ge high-mobility-channel by thermal nonequilibrium process

2004 - 2006 Controlling deformation of strained hetero structure of group IV semiconductors for realization of ultra uniform strain fields

2005 - 2005 シリコンナノエレクトロニクスの新展開-ポストスケーリングテクノロジー

2003 - 2005 Control of solid-phase reaction dynamics and carbon engineering for nanofabrication of group-IV

2001 - 2004 Development of direct observation technique of single electron trap and investigation of degradation mechanism of ultra-thin gate dielectric films

2000 - 2004 超機能化グローバル・インターフェース・インテグレーション研究

2001 - 2003 異種材料界面制御による超低抵抗コンタクトの開発と半導体/金属界面の原子直視研究

1999 - 2003 人工IV族半導体極微細構造デバイス製作のための原子精度要素プロセスの開発

2000 - 2002 In situ transmission electron microscopy of degradation phenomena of Pb(Zrx Ti_<l-x>)O_3 thin films

1999 - 2001 Study on the formation of CoSi_2/Si(100) heterostructures by reactive epitaxial growth

1997 - 1999 Development of atomically-controlled oxidation techniques for ultra-thin gate oxide films

1996 - 1998 Studies on Surface Reaction Mechanisms in Atomic Layr CVD by HREELS

1996 - 1998 Development of Low-Resistivity Contact Materials for Future ULSIs

1995 - 1996 Study of Evaluation of Silicide/Silicon Interfaces by Tunneling Spectroscopy and Effects of H-Termination

1994 - 1995 A study on influences of hydrogen on growth mechanisms of thin films by electron energy loss spectroscopy

1994 - 1995 STUDY ON INFRA-RED OPTICAL DEVICES BY Si_<1-x>Ge_x HETERO-STRUCTURES

1994 - 1994 電子エネルギー損失分光法を用いたフリーラジカルと半導体表面の相互作用の研究

1993 - 1993 電子エネルギー損失分光法を用いたフリーラジカルと半導体表面の相互作用の研究

1992 - 1993 Development of a time-resolved measurement method for detecting surface dynamic processes of epitaxial growth and studies on surface migration of reaction species.

1992 - 1993 Studies on Quantum Transport Mechanism of Si Quasi-One-Dimensional Carrier Systems by a Time-of-Flight Method with Pulse Lasers

1990 - 1991 Development of time-dependent vibration-excited spectroscopy and study on the growth process of semiconductor thin films.

1988 - 1989 Investigation of the Mechanism of Ge/Si heteroepitaxial Growth with Interfacial Reactions

1986 - 1986 ゲート酸化薄膜の低温形成に関する研究

1985 - 1985 シリコンの低温エピタキシャル成長に関する基礎的研究

Show all

Papers (386)：

Ying Peng, Huajun Lai, Chengyan Liu, Jie Gao, Masashi Kurosawa, Osamu Nakatsuka, Tsunehiro Takeuchi, Shigeaki Zaima, Sakae Tanemura, Lei Miao. Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping. APPLIED PHYSICS LETTERS. 2020. 117. 5
Ying Peng, Lei Miao, Jie Gao, Chengyan Liu, Masashi Kurosawa, Osamu Nakatsuka, Shigeaki Zaima. Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation. Scientific Reports. 2019. 9. 1
Kouta Takahashi, Hiroshi Ikenoue, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima, Masashi Kurosawa. Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process. Applied Physics Express. 2019. 12. 5. 51016-51016
Takuma Doi, Wakana Takeuchi, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima. Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment (vol 58, SBBD05, 2019). JAPANESE JOURNAL OF APPLIED PHYSICS. 2019. 58. 0. SBBD05-SBBD05
Masashi Kurosawa, Yu Inaishi, Ryuji Tange, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima. Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination. Japanese Journal of Applied Physics. 2019. 58. SA. SAAD02-SAAD02

ｍore...

MISC (265)：

Zaima Shigeaki. Cooperation between The Japan Institute of Electronics Packaging and The Japan Society of Applied Physics. Journal of The Japan Institute of Electronics Packaging. 2020. 23. 1. P1-P1
Kazuki Senga, Shigehisa Shibayama, Mitsuo Sakashita, Shigeaki Zaima, Osamu Nakatsuka. Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2. 19th International Workshop on Junction Technology, IWJT 2019. 2019
Galih Ramadana Suwito, Masahiro Fukuda, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima. Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny Quantum Well Structures. 2019 COMPOUND SEMICONDUCTOR WEEK (CSW). 2019
Yukihiro Imai, Kouta Takahashi, Noriyuki Uchida, Tatsuro Maeda, Osamu Nakatsuka, Shigeaki Zaima, Masashi Kurosawa. Domain size effects on thermoelectric properties of p-type Ge0.95Sn0.05 layers grown on GaAs and Si substrates. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. 2018. 310-312
Kouta Takahashi, Hiroshi Ikenoue, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima, Masashi Kurosawa. Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. 2018. 313-315

ｍore...

Books (1)：

プロセスインテグレーション
丸善 2010 ISBN:9784621082843

Lectures and oral presentations (44)：

Ultra-low resistance contact for n-type Ge[1-x]Sn[x] with in-situ Sb heavily doping and nickel stanogermanide formation (シリコン材料・デバイス)
(電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 2019)
Crystal Growth and Device Application of New Group-IV Semiconductor Alloys
(Abstract of annual meeting of the Surface Science of Japan 2017)
Reduction of Schottky barrier height of metal/Ge contact by insertion of IV-group mixed crystal semiconductor layer
(Abstract of annual meeting of the Surface Science of Japan 2016)
Thermoelectric property of n-type Ge1-xSnx films grown on Si(001)
(Abstract of annual meeting of the Surface Science of Japan 2016)
Solid phase epitaxy of Si1-xSnx films on Si(001)
(Abstract of annual meeting of the Surface Science of Japan 2016)

ｍore...

Professional career (1)：

工学博士 (東北大学)

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page