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J-GLOBAL ID:201801011638920964   Update date: Feb. 21, 2025

Oishi Toshiyuki

オオイシ トシユキ | Oishi Toshiyuki
Affiliation and department:
Homepage URL  (1): http://www.ee.saga-u.ac.jp/sedlab/index.htm
Research field  (3): Electronic devices and equipment ,  Electronic devices and equipment ,  Electric/electronic material engineering
Research keywords  (10): Wireless Power Transfer ,  Gallium Oxide ,  Diamond ,  Gallium Nitride ,  Wide Bandgap Semiconductor ,  Process technologies ,  Device modeling ,  Device and material characteristics ,  High frequency high power devices ,  Electronic devices
Research theme for competitive and other funds  (5):
  • 2024 - 2027 2端子対回路評価による窒化ガリウムトラップの大信号における物理解明と回路モデル化
  • 2022 - 2025 Science of Inch-Diameter Diamond Heteroepitaxial Growth on Lattice-Mismatched Substrate
  • 2021 - 2024 Analysis of Physical Mechanism for GaN Semiconductors Traps by AC Two Port Network
  • 2019 - 2022 Fundamental Study on Cubic Diamond Heteroepitaxial Growth on Trigonal Sapphire Substrate
  • 2015 - 2018 Study on super wide band gap semiconductor toward fabrication of high power electric devices operating at high frequency
Papers (180):
  • Niloy Chandra Saha, Tomoki Shiratsuchi, Masanori Eguchi, Toshiyuki Oishi, Makoto Kasu. Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation. Journal of Vacuum Science & Technology B. 2024
  • Makoto Kasu, Yuto Otsubo, Sayleap Sdoeung, Masanori Eguchi, Niloy Chandra Saha, Toshiyuki Oishi, Kohei Sasaki, Chia-Hung Lin, Jun Arima, Katsumi Kawasaki, et al. Microgrooves with low-index facets in halide vapor deposited (001) β-Ga2O3: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography. Applied Physics Express. 2024. 17. 7. 071004-071004
  • Yutaro Yamaguchi, Keigo Nakatani, Shintaro Shinjo, Toshiyuki Oishi, Yasuyuki Miyamoto. Trapping Compensation for Transient Recovery in GaN LNAs. IEEE Transactions on Microwave Theory and Techniques. 2024. 72. 7. 4006-4016
  • Toshiyuki Oishi, Shiori Takada, Ken Kudara, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka. Drain bias dependence of Y 22 and Y 21 signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors. Japanese Journal of Applied Physics. 2024. 63. 1. 010905-010905
  • Niloy Chandra Saha, Tomoki Shiratsuchi, Toshiyuki Oishi, Makoto Kasu. Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs. IEEE Electron Device Letters. 2023. 44. 10. 1704-1707
more...
MISC (51):
  • 西村 匠史, 田渕 将也, 山口 裕太郎, 大塚 友絢, 新庄 真太郎, 山中 宏治, 大石 敏之. GaN HEMTの小信号等価回路解析による深い準位の評価-Evaluation of deep level by small signal equivalent circuit analysis of GaN HEMT-放送技術. 映像情報メディア学会技術報告 = ITE technical report. 2021. 45. 1. 5-8
  • Study on small signal equivalent circuit for buffer traps to reproduce low frequency Y parameters in GaN HEMT. Record of Joint Conference of Electrical and Electronics Engineers in Kyushu. 2020. 2020. 337-337
  • Kasu Makoto, Sdoeung Sayleap, Sasaki Kohei, Oishi Toshiyuki, Kawasaki Katsumi, Hirabayashi Jun, Kuramata Akito. Origin of Reverse Leakage Current in EFG β-Gallium Oxide Schottky Barrier Diodes Identified by Ultra-High Sensitive Emission Microscope. JSAP Annual Meetings Extended Abstracts. 2020. 2020.2. 2362-2362
  • 橋川 誠, 浦田 幸佑, 竹ノ畑 拓海, 大石 敏之, 大島 孝仁. β-Ga2O3 SBDを利用したRF-DC変換回路における負荷抵抗と電極面積依存性-Load resistance and area dependence in β-Ga2O3 diode RF-DC converter circuit-レーザ・量子エレクトロニクス. 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2019. 119. 304. 25-28
  • 石松 裕真, 舟木 浩祐, 桝谷 聡士, 宮崎 恭輔, 大島 孝仁, 嘉数 誠, 大石 敏之. NO2ホールドーピング水素終端ダイヤモンドMOS FETのDCストレス評価 (電子デバイス). 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2017. 117. 331. 69-72
more...
Patents (153):
Books (2):
  • 素子分離技術総論
    2000
  • 2000 半導体テクノロジー大全
    電子ジャーナル 2000
Lectures and oral presentations  (283):
  • GaN HEMTの表面・ GaNトラップが低周波 Yパラメータのドレイン電圧依存性に与える影響(シミュレーション)
    (電子情報通信学会研究会 2025)
  • Si基板上 GaN-HEMTにおける基板中の RFリーク電流を考慮した半物理大信号モデル
    (電子情報通信学会研究会 2025)
  • AlGaN/GaN HEMTの表面トラップ位置が低周波Yパラメータに与える影響 (デバイスシミュレーション)
    (2024年度(第77回)電気・情報関係学会九州支部連合大会 2024)
  • 表面トラップ濃度がAlGaN/GaN構造の低周波Yパラメータに与える影響 (デバイスシミュレーション)
    (2024年度(第77回)電気・情報関係学会九州支部連合大会 2024)
  • ゲートラグ測定による低周波領域におけるAlGaN/GaN HEMTのトラップの周波数特性評価
    (2024年度(第77回)電気・情報関係学会九州支部連合大会 2024)
more...
Works (48):
  • 窒化物半導体装置およびその製造方法
    2013 - 2013
  • Semiconductor device and manufacturing method thereof
    T.Oishi, Y.Yamamoto, H.Otsuka, K.Yamanaka, A.Inoue 2012 - 2012
  • 半導体装置の製造方法
    2012 - 2012
  • 窒化物半導体装置の製造方法
    2011 - 2011
  • Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region
    T.Nanjo, M.Suita, Y.Abe, T.Oishi, Y.Tokuda 2011 - 2011
more...
Education (2):
  • 1984 - 1986 Kyoto university Faculty of Engineerig Electrical Engineering
  • 1980 - 1984 Kyoto University Graduate School of Engineerigng Electrical Engineering
Professional career (1):
  • 博士(工学) (名古屋大学)
Work history (2):
  • 2014/03 - 現在 Saga university Department of Electrical and Electronic Engineering
  • 1986/04 - 2014/03 Mitsubishi Electric Corporation
Association Membership(s) (3):
IEEE ,  THE JAPAN SOCIETY OF APPLIED PHYSICS ,  THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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