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J-GLOBAL ID：200902198877059800   Reference number：99A0991389

Search for Midgap Levels in 3C-SiC Grown on Si Substrates.

Si基板上の3C-SiC成長中のミドギャップ準位の検討

Author (5)： YAMADA N (Toyota Central Res. and Dev. Lab. Inc., Aichi, JPN) ,  KATO M (Nagoya Inst. Technol., Nagoya, JPN) ,  ICHIMURA M (Nagoya Inst. Technol., Nagoya, JPN) ,  ARAI E (Nagoya Inst. Technol., Nagoya, JPN) ,  TOKUDA Y (Aichi Inst. Technol., Toyota, JPN)
Material： Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)
Volume： 38  Issue： 10A  Page： L1094-L1095  Publication year： Oct. 01, 1999 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *silicon carbide ,...

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JST classification (2)： Electronic structure of impurites and defects  (BM02100I) ,  Lattice defects in semiconductors  (BK12040Q)

Reference (9)：

• 1) T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner and N. Nordell: Phys. Status Solidi A 162 (1997) 199.
• 2) P. Zhou, M. G. Spencer, G. L. Harris and K. Fekade: Appl. Phys. Lett. 50 (1987)1384.
• 3) K. Zekentes, M. Kayiambaki and G. Constantinidis: Appl. Phys. Lett. 66 (1995) 3015.
• 4) M. Ichimura, Y. Koga, N. Yamada, T. Abe, E. Arai and Y. Tokuda: Jpn. J. Appl. Phys. 37 (1998) L18.
• 5) V. Nagesh, J. W. Farmer, R. F. Davis and H. S. Kong: Appl. Phys. Lett. 50 (1987) 1138.

Terms in the title (3)： Si基板 ,  3C-SiC ,  成長