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J-GLOBAL ID：200902297000146514   Reference number：09A1147284

Purified Si film formation from metallurgical-grade Si by hydrogen plasma induced chemical transport

水素プラズマ誘起化学輸送による冶金級Siからの純化Si膜形成

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Author (6)： OHMI Hiromasa (Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamadaoka, Suita, Osaka ...) ,  GOTO Akihiro (Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamadaoka, Suita, Osaka ...) ,  KAMADA Daiki (Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamadaoka, Suita, Osaka ...) ,  HAMAOKA Yoshinori (Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamadaoka, Suita, Osaka ...) ,  KAKIUCHI Hiroaki (Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamadaoka, Suita, Osaka ...) ,  YASUTAKE Kiyoshi (Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamadaoka, Suita, Osaka ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 95  Issue： 18  Page： 181506  Publication year： Nov. 02, 2009 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： plasma ,  Hydrogen ,  chemical transport ,  *silicon ,  *thin film growth ,  purity ,  preparation (material) ,  impurity ,  hydrogenation ,  Iron ,  Aluminum ,  Titanium ,  Chromium ,  Manganese ,  concentration (ratio) ,  film deposition

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (6)： 水素プラズマ ,  誘起 ,  化学輸送 ,  冶金 ,  Si ,  Si膜