Research field (1)：
Electronic devices and equipment
Research theme for competitive and other funds (3)：
2020 - 2023 Investigation on control of SiC surface and silicide-less contact using silicon-cap-annealing
2016 - 2019 Development of Local Semiconductor Crystalline Quality Estimation Method by Electron Back Scatter Diffraction
2013 - 2015 Development of defect-controlled hetero-junction contact with amorphous silicon insertion
Papers (19)：
Hoa Thi Khanh Nguyen, Hiroaki Hanafusa, Ryuji Kawakita, Shohei Hayashi, Takuma Sato, Seiichiro Higashi. Investigation on characteristics of millisecond solid-phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication. Japanese Journal of Applied Physics. 2021. 60. 10
Kazuki Segawa, Hiroaki Hanafusa, Yuri Mizukawa, Seiichiro Higashi. Large area annealing by magnetic field scanning of atmospheric pressure thermal plasma beam. Japanese Journal of Applied Physics. 2020. 59
Tomotaka Hirano, Fumiyasu Kondo, Satoshi Nagasawa, Hiroaki Hanafusa, Yuri Mizukawa, Seiichiro Higashi. Development of high-yield layer transfer process of single-crystalline silicon thin films on plastic substrate and its application to multi-functional device integration. Japanese Journal of Applied Physics. 2020. 59
