Art

J-GLOBAL ID：201402231105806950   Reference number：14A0903011

Effect of Gas Flow Rate on the High-Rate, Localized Jet-Deposition of Silicon in SiH₄/H₂ PE-CVD

SiH₄/H₂PE-CVDにおけるシリコンの高速局所化ジェット堆積に及ぼすガス流量の影響

Author (3)： NISHIDA Satoshi (Gifu Univ., Gifu, JPN) ,  MUTA Hiroshi (Gifu Univ., Gifu, JPN) ,  KURIBAYASHI Shizuma (Gifu Univ., Gifu, JPN)
Material： Journal of Chemical Engineering of Japan  (J Chem Eng Jpn)
Volume： 47  Issue： 4/7  Page： 478-482  Publication year： Jul. 2014 
JST Material Number： S0629A  ISSN： 0021-9592  CODEN： JCEJAQ  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *chemical vapor deposition ,  silicon ,  silane ,  supersonic jet ,  *rate of sedimentation ,  plasma CVD ,  flow rate ,  dependence ,  jet (flow) ,  velocity dependence ,  deposition rate ,  *computational fluid dynamics ,  gas flow rate ,  flow dependence ,  *fluid dynamics ,  *Physics ,  *Science ,  *Mechanics ,  *continuum mechanics ,  *natural science
Semi thesaurus term： *computational fluid dynamics ,  CVD ,  *silicon ,  PECVD

JST classification (2)： Solar cell  (NC03084O) ,  Manufacturing technology of solid-state devices  (NC03030V)

Reference (18)：

• Abhinandan, L. and A. Holländer; “Localized Deposition of Hydrocarbon Using Plasma Activated Chemical Vapour Deposition,” Thin Solid Films, 457, 241-245 (2004)
• Chae, Y. K., H. Ohno, K. Eguchi and T. Yoshida; “Ultrafast Deposition of Microcrystalline Si by Thermal Pasma Chemical Vapor Deposition,” J. Appl. Phys., 89, 8311-8315 (2001)
• Gardon, R. and J. Cobonpue; “Heat Transfer between a Flat Plate and Jets of Air Impinging on It,” Int. Develop. Heat Transfer, ASME, 454-460 (1962)
• Heberlein, J., O. Postel, S. Girshick, P. McMurry, W. Gerberich, D. Iordanoglou, F. Di Fonzo, D. Neumann, A. Gidwani, M. Fan and N. Tymiak; “Thermal Plasma Deposition of Nanophase Hard Coatings,” Surf. Coat. Technol., 142-144, 265-271 (2001)
• Holländer, A. and L. Abhinandan; “Localized Deposition by μ-Jet-CVD,” Surf. Coat. Technol, 174-175, 1175-1177 (2003)

Terms in the title (7)： SiH4 ,  CVD ,  シリコン ,  局所化 ,  ジェット ,  堆積 ,  ガス流量