Art
J-GLOBAL ID:201402231105806950   Reference number:14A0903011

Effect of Gas Flow Rate on the High-Rate, Localized Jet-Deposition of Silicon in SiH4/H2 PE-CVD

SiH4/H2PE-CVDにおけるシリコンの高速局所化ジェット堆積に及ぼすガス流量の影響
Author (3):
Material:
Volume: 47  Issue: 4/7  Page: 478-482  Publication year: Jul. 2014 
JST Material Number: S0629A  ISSN: 0021-9592  CODEN: JCEJAQ  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

JST classification (2):
JST classification
Category name(code) classified by JST.
Solar cell  ,  Manufacturing technology of solid-state devices 
Reference (18):

Return to Previous Page