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J-GLOBAL ID:201502229232443355   Reference number:15A0532907

Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

ハロゲン化物気相成長によるβ-Ga2O3層のホモエピタキシャル成長
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Volume:Issue:Page: 015503.1-015503.4  Publication year: Jan. 2015 
JST Material Number: F0599C  ISSN: 1882-0778  CODEN: APEPC4  Document type: Article
Article type: 短報  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Crystal growth of semiconductors  ,  Techniques and equipment of crystal growth 
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