Art

J-GLOBAL ID：201702214093777311   Reference number：17A1223681

Slow response in gate current-voltage characteristics of metal-oxide-semiconductor structures on the 4H-SiC (000<span style=text-decoration:overline>1</span>) face

4H-SiC(000<span style=text-decoration:overline>1</span>)面上の金属酸化物半導体構造のゲート電流-電圧特性の遅い応答

Author (8)： KUMAGAI Naoki (Fuji Electric Co., Ltd., Tokyo, JPN) ,  KUMAGAI Naoki (National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  KIMURA Hiroshi (Fuji Electric Co., Ltd., Tokyo, JPN) ,  KIMURA Hiroshi (National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  ONISHI Yasuhiko (Fuji Electric Co., Ltd., Tokyo, JPN) ,  ONISHI Yasuhiko (National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  OKAMOTO Mitsuo (National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  FUKUDA Kenji (National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 55  Issue： 5  Page： 054103.1-054103.8  Publication year： May. 2016 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： silicon carbide ,  *current-voltage characteristic ,  compound semiconductor ,  substrate (plate) ,  *MOSFET ,  *MOS structure ,  *condenser (capacitor) ,  N-type semiconductor ,  *gate (semiconductor) ,  carrier injection ,  *carrier capture ,  silicon dioxide ,  *interface trap
Semi thesaurus term： 4H-SiC ,  *metal oxide semiconductor field effect transistor

JST classification (2)： Transistors  (NC03070N) ,  Metal-insulator-semiconductor structures  (BM03085X)

Reference (33)：

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• S. Harada, S. Suzuki, J. Senzaki, R. Kosugi, K. Adachi, K. Fukuda, and K. Arai, IEEE Electron Device Lett. 22, 272 (2001).

Terms in the title (5)： 4H-SiC ,  金属酸化物半導体 ,  ゲート電流 ,  電圧特性 ,  応答