Art
J-GLOBAL ID:201902220795035185   Reference number:19A0890943

Highly effective removal of OH bonds in low-temperature silicon oxide films by annealing with ammonia gas at a low temperature of 175 °C

低温でのアンモニアガスでのアニーリングによる低温酸化ケイ素膜中のOH結合の高効率除去
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Material:
Volume: 58  Issue:Page: 038002.1-038002.4  Publication year: Mar. 2019 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 短報  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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JST classification
Category name(code) classified by JST.
Oxide thin films 

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