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J-GLOBAL ID：200901037332506802   Update date: Apr. 09, 2024

Ohtake Akihiro

オオタケ アキヒロ | Ohtake Akihiro
Affiliation and department：
National Institute for Materials Science Research Center for Functional Materials

About National Institute for Materials Science Research Center for Functional Materials


Job title： Principal Researcher
Other affiliations (1)：
Research field  (5)： Crystal engineering ,  Electric/electronic material engineering ,  Thin-film surfaces and interfaces ,  Nanobioscience ,  Nanomaterials
Research keywords  (6)： 分子線エピタキシー ,  電子回析 ,  表面再配列 ,  Molecular beam epitaxy ,  Electron diffraction ,  Surface reconstruction
Research theme for competitive and other funds  (8)：
  • 2013 - 2016 Self-assemmbly of ideal quantum dots by droplet epitaxy
  • 2012 - 2015 Valence-band engineering and interface-dipole control for realizing III-V pMOSFET
  • 2010 - 2012 Surface atomic structure of compound semiconductors treated with active nitrogen species
  • 2010 - 2012 Development of the novel ferromagnetic materials by the two-dimensional structure control and clarification of the mechanism of the ferromagnetism for Mn-GaAs
  • 2006 - 2012 high-k絶縁膜/化合物半導体界面制御
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Papers (113)：
  • Xu Yang, Shisheng Li, Naoki Ikeda, Akihiro Ohtake, Yoshiki Sakuma. Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source. Applied Surface Science. 2023. 636. 157756-157756
  • Akihiro Ohtake, Takayuki Suga, Shunji Goto, Daisuke Nakagawa, Jun Nakamura. Atomic structure of the Se-passivated GaAs(001) surface revisited. Scientific Reports. 2023. 13. 1
  • Takaaki Mano, Akihiro Ohtake, Takuya Kawazu, Hideki T. Miyazaki, Yoshiki Sakuma. Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface. ACS Applied Materials & Interfaces. 2023. 15. 24. 29636-29642
  • Akihiro Ohtake, Xu Yang. Fabrication of Lattice-Mismatched MoTe<sub>2</sub>/MoSe<sub>2</sub> Heterostructures using Molecular-Beam Epitaxy. Crystal Growth & Design. 2023. 23. 7. 5001-5007
  • Akihiro Ohtake, Xu Yang, Jun Nara. Structure and morphology of 2H-MoTe2 monolayer on GaAs(111)B grown by molecular-beam epitaxy. npj 2D Materials and Applications. 2022. 6. 1
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MISC (39)：
  • 大竹晃浩, 間野高明, 宮田典幸, 森貴洋, 安田哲二. Si(111)上でのGaSbヘテロエピタキシーとHfO2/GaSb MOSキャパシタの作製. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2014. 75th. ROMBUNNO.19P-PB5-14
  • 宮田典幸, 大竹晃浩, 市川昌和, 森貴洋, 安田哲二. Si(001)上のGaSbナノコンタクトヘテロエピ成長とHfO2/GaSb MOS特性. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2014. 75th. ROMBUNNO.20A-PA3-7
  • 宮田典幸, 大竹晃浩, 市川昌和, 安田哲二. GaSb(100)-c(2x6)表面に形成したHfO2MOSキャパシタの電気特性. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2013. 60th. ROMBUNNO.29P-PB1-15
  • Kanno Yusuke, Ohtake Akihiro, Nakamura Jun. 26pPSB-36 Atomic arrangement and electronic states of the GaAs(001)-(2x2)Mn surface. Meeting abstracts of the Physical Society of Japan. 2012. 67. 1. 964-964
  • Kanno Yusuke, Ohtake Akihiro, Hirayama Motoi, Nakamura Jun. 23pPSB-7 Atomic arrangement and electronic states of the GaAs(001)-(2×2)Mn surface. Meeting abstracts of the Physical Society of Japan. 2011. 66. 2. 946-946
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Patents (8)：
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Education (4)：
  • Waseda University School of Science and Engineering
  • 早稲田大学大学院理工学研究科資源及び材料工学専攻材料工学専門分野
  • Department of Materials Science and Engineering, School of Science and Engineering, Waseda University
  • Materials Science and Engineering, Graduate School of Science and Engineering Waseda University
Professional career (1)：
  • Doctor of Engineering
Work history (9)：
  • 2001 - :独立行政法人物質・材料研究機構研究員
  • 2001 - : Researcher at National Institute for Materials
  • 1996 - :アトムテクノロジー研究体研究員
  • 1996 - : Research Scientist at Joint Research Center for Atom
  • 1994 - :早稲田大学理工学部助手
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Association Membership(s) (4)：
日本物理学会 ,  応用物理学会 ,  The Physical Society of Japan ,  Japan Society of Applied Physics
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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