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J-GLOBAL ID：200901077995207576   Update date: Sep. 25, 2024

Horita Susumu

ホリタ ススム | Horita Susumu
Affiliation and department：
Japan Advanced Institute of Science and Technology School of Materials Science, Department of Materials Science, School of Materials Science

About Japan Advanced Institute of Science and Technology School of Materials Science, Department of Materials Science, School of Materials Science


Job title： Associate Professor
Homepage URL  (1)： http://www.jaist.ac.jp/ms/labs/handoutai/horita-lab/horita.html
Research field  (2)： Electronic devices and equipment ,  Electric/electronic material engineering
Research keywords  (16)： シリコーンオイル ,  オゾン ,  低温Si酸化膜作製 ,  スパッタリング ,  TFT ,  thin film transistor ,  crystallization of Si film ,  強誘電体薄膜 ,  ferroelectric memory ,  Si薄膜 ,  薄膜作製 ,  薄膜結晶成長 ,  半導体工学 ,  電子デバイス ,  silicon oxide film ,  laser anneal
Research theme for competitive and other funds  (20)：
  • 2021 - 2024 Significant improvement of electrical properties of low-temperature deposited silica film by annealed at lower than 200oC
  • 2016 - 2019 Fabrication of thin-film transistor of crystallized silicon film on cellulose nanopaper
  • 2009 - 2011 Control of grain size in a low-temperature-crystallized Si film using seed layer
  • 2003 - 2004 Development of New FET-Type Ferroelectric Memory with an Intermediate Electrode
  • 2004 - シリコーンオイルとオゾンガスを用いた低温シリコン酸化膜の形成
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Papers (109)：
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MISC (5)：
Patents (3)：
  • 非破壊読出し可能な強誘電体メモリデバイス
  • 導電体薄膜の堆積法
  • 半導体装置の製造及び被処理物処理方法
Books (3)：
  • 薄膜作製応用ハンドブック
    エヌ・ティー・エス 2020 ISBN:9784860436315
  • 薄膜ハンドブック(第2版)、4・3 誘電特性4・3・1 誘電体薄膜の性質(2)強誘電性
    オーム社 2008
  • 薄膜トランジスタ 、1章(分担)
    コロナ社 2008
Lectures and oral presentations  (121)：
  • Effect of ammonia gas in annealing process on reduction of residual OH-bonds and improvement of electrical properties of low-temperature silicon oxide films
    (The 4th International Workshop on Advanced Materials and Devices IWAMD 2023, EMD-I7 2023)
  • Deposition temperature dependence of amount of residual OH groups in low-temperature Si oxide films after in-situ post-deposition heating
    (2023)
  • Quantitative Evaluation of Low-temperature Si Oxide Films by Derivative FT-IR Spectra
    (The 29th International Display Workshops(IDW' 22), FMCp3-5L, pp. 361-364. 2022)
  • Evaluation of residual OH groups in low temperature Si oxide films by FT IR differential spectra
    (2022)
  • Influence of Substrate Temperature on Crystalline Property of YSZ Thin Films Deposited at Low Temperature by Reactive Sputtering
    (2022)
ｍore...
Works (2)：
  • 研究成果活用プラザ石川実用化検討に係る試験研究事業(JST)
    2003 -
  • 研究成果活用プラザ石川実用化検討に係る試験研究事業(JST)
    2002 -
Professional career (1)：
  • Dr.Eng. in Applied Electronics, Tokyo Institute of Technology(1987)
Work history (2)：
  • 1988 - Recturer (1988), Associate Professor (1992) at Kanazawa University
  • 1987 - Kanazawa University Faculty of Engineering
Committee career (6)：
  • 電子情報通信学会 一般会員
  • 日本表面学会 一般会員
  • 応用物理学会 一般会員
  • Institute of Electronics Information and Communication Engineers in Japan Member
  • Surface Science Society of Japan Member
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Awards (5)：
  • 2017/04 - 応用物理学会 第15回APEX/JJAP編集貢献賞
  • 2015/11 - 独立行政法人日本学術振興会 科研費審査委員賞
  • 2013/12 - The 20th International Display Workshops (IDW'13) Outstanding Poster Paper Award
  • 2012/04 - 応用物理学会 第10回APEX/JJAP編集貢献賞
  • 2003/12/03 - 10th International Display Workshops Outstanding Poster Paper Award
Association Membership(s) (8)：
MRS (Materials Research Society) ,  電子情報通信学会 ,  日本表面学会 ,  応用物理学会 ,  MRS (Materials Research Society) in U.S.A. ,  Institute of Electronics Information and Communication Engineers in Japan ,  Surface Science Society of Japan ,  Japan Society of Applied Physics
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