Rchr
J-GLOBAL ID：201501062120386078
Update date: Feb. 01, 2024
Kamei Kazuhito
カメイ カズヒト | Kamei Kazuhito
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Affiliation and department：
日鉄テクノロジー(株) 尼崎事業所
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Job title：
専門主幹
Homepage URL (1)：
https://kaken.nii.ac.jp/d/r/10527576.ja.html
Research field (1)：
Electric/electronic material engineering
Research theme for competitive and other funds (1)：
2013 - 2016 High-quality and Low-resistant SiC crystal
Papers (8)：
Yonemura Mitsuharu, Naga Shoichi, Kamei Kazuhito. Tunnel-type Giant Magnetoresistance in Co-Al-Ta-O Insulated Granular System. Japanese Journal of Applied Physics. 2001. 40. 2. 740-745
Yonemura Mitsuharu, Sueoka Koji, Kamei Kazuhito. Analysis of Local Lattice Strain Around Oxygen Precipitates in Czochralski-Grown Silicon Wafers Using Convergent Beam Electron Diffraction. Japanese Journal of Applied Physics. 1999. 38. 6. 3440-3447
K Kamei, Y Maehara. Magnetic properties and microstructure of electrodeposited Fe-P amorphous alloy. JOURNAL OF APPLIED ELECTROCHEMISTRY. 1996. 26. 5. 529-535
Yoshitaka Adachi, Kazuhito Kamei. Tem study of diffusional α-Fe/Zn interface (nano-scale-characterization of galvannealed steel). Acta Metallurgica Et Materialia. 1995. 43. 8. 3189-3197
K KAMEI, Y MAEHARA. STRUCTURE AND MAGNETIC-PROPERTIES OF PULSE-PLATED FE-P AND FE-CU-P AMORPHOUS-ALLOYS. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING. 1994. 181. 906-910
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MISC (29)：
亀井 一人. 溶液成長によるSiC単結晶の育成 (特集 時代が求める「シリコンカーバイド」(プロセス編)). 工業材料. 2009. 57. 12. 28-31
Solution growth of SiC single crystals. Optronics. 2008. 27. 5. 157-162
Kamei Kazuhito, Inoue Shigeru, Itoh Yutaka. Growth of Single Crystalline AlN by Solution Growth Technique(<Special Issue>Bulk Crystals for Substrates). Journal of the Japanese Association of Crystal Growth. 2005. 32. 1. 20-23
YONEMURA Mitsuharu, KAMEI Kazuhito, SUEOKA Koji. Analysis of Local Lattice Strain Around Oxygen Precipitates in Silicon Wafers Unsing Convergent Beam Electron Diffraction. Materia Japan. 2000. 39. 12. 988-988
SHIBAGAKI Shigeki, KAMEI Kazuhito. TEM Analysis of Grain Boundaries in SrTiO_3-Based Semiconductor Ceramics. Journal of the Ceramic Society of Japan. 2000. 108. 1259. 666-672
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Patents (10)：
SiC単結晶の製造方法
SiC単結晶の製造方法
SiC単結晶の製造装置及び製造方法
SiC単結晶の製造方法
SiC単結晶の製造方法
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Work history (1)：
2013 - 2014 Nagoya University
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