Akasaka Tetsuya

アカサカテツヤ | Akasaka Tetsuya

Affiliation and department：
Job title： Professor
Homepage URL (1)： http://www.researcherid.com/rid/N-5822-2015

Research field (3)： Semiconductors, optical and atomic physics , Crystal engineering , Electric/electronic material engineering

Research keywords (2)：半導体物性 , 結晶成長

Research theme for competitive and other funds (5)：

2022 - 2025 liquid phase epitaxy of nitride semiconductor thin films under an atmospheric pressure nitrogen ambience
2016 - 2019 窒化物半導体ステップフリー面を利用した新規分子層エピタキシ
2014 - 2017 Dislocation passivation in InGaN by intentinally using immiscible nature during MBE growth by DERI method
2010 - 2013 窒化物半導体ステップフリーヘテロ構造の研究
2006 - 2010 六方晶BN窒化物半導体に関する研究

Papers (84)：

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MISC (112)：

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Patents (25)：

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Lectures and oral presentations (47)：

N-face (000-1) GaN/InN/GaN double-heterostructures emitting near-IR photoluminescence grown by metalorganic vapor phase epitaxy
(International Workshop on Nitride Semiconductors 2018 2018)
One- or two-monolayer-thick InN single quantum wells fabricated on step-free GaN surfaces
(19th International Conference on Metalorganic Vapor Phase Epitaxy 2018)
MOVPE growth of wurtzite BN-related alloys
(12th International Conference on Nitride Semiconductors 2017)
Realization of ZnO-Nanowire-Induced Nanocavities in Grooved SiN Photonic Crystals
(The 2016 MRS Fall Meeting & Exhibit 2016)
Atomic Level C-AFM Characterization of GaN Grown Under Spiral Mode
(International Workshop on Nitride Semiconductors 2016 2016)

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Professional career (1)：

Work history (3)：

Association Membership(s) (2)：

THE JAPAN SOCIETY OF APPLIED PHYSICS , JAPANESE ASSOCIATION FOR CRYSTAL GROWTH

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