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J-GLOBAL ID：201901017156653727 Update date: Nov. 21, 2024

Ikeda Akihiro

イケダアキヒロ | Ikeda Akihiro

Affiliation and department：

Research field (1)： Electronic devices and equipment

Research keywords (2)： 4H-SiC , Laser doping

Research theme for competitive and other funds (13)：

2017 - 2020 液中レーザドーピングにおけるSiC表面温度のその場計測と不純物プロファイル制御
2016 - 2018 Low temperature oxidation of SiC using catalytic effects of functional oxides
2014 - 2017 ドーピング時の発光測定を用いたSiCへのウエットケミカルレーザドープの機構解明
2013 - 2016 Study on high-speed doping mechanism of wet laser processing
2011 - 2014 Integrated biosensor system for taste, odor and visual senses

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Papers (53)：

Akihiro Ikeda, Ryotaro Kimura. Ohmic Contact Formation on 4H-SiC by CO2 Laser Annealing of Metal Film on the 4H-SiC. Abst. 10th International Conference on Electromagnetic Devices and Processes in Environment Protection (ELMECO-10). 2022
Shogo Mutoh, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano. Evaluation of Temperature at SiC Surface during Pulsed Excimer Laser Irradiation. Proc. the 2021 International Japan-Africa Conference on Electronics, Communications, and Computations, JAC-ECC 2021. 2021. 217-220
Kaname Imokawa, Toshifumi Kikuchi, Kento Okamoto, Daisuke Nakamura, Akihiro Ikeda, Tanemasa Asano, Hiroshi Ikenoue. High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication. Materials Science Forum. 2019. 963. 403-406
Akihiro Ikeda, Takashi Shimokawa, Hiroshi Ikenoue, Tanemasa Asano. Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser. Materials Science Forum. 2019. 963. 412-415
Okamoto Kento, Kikuchi Toshifumi, Ikeda Akihiro, Ikenoue Hiroshi, Asano Tanemasa. Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source. JAPANESE JOURNAL OF APPLIED PHYSICS. 2019. 58

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MISC (30)：

神崎雅俊, 永島伸彦, 千田貴大, 池田晃裕, 栗焼久夫, 都甲潔. 微細加工を施した層状物質CuFeTe2の酸素インターカレーションを用いた酸素センサ. 「センサ・マイクロマシンと応用システム」シンポジウム論文集電気学会センサ・マイクロマシン部門 [編]. 2015. 32. 1-5
神崎雅俊, 永島伸彦, 池田晃裕, 栗焼久夫, 都甲潔. Effect of Centrifugal Etching in Micro-fabricated CuFeTe2 Thin Films for Oxygen Sensor Devices. 九州大学大学院システム情報科学紀要. 2015. 20. 1. 15-20
Koganemaru Masaaki, Uchino Masakazu, Ikeda Akihiro, Asano Tanemasa. Examination of Residual Stress Evaluation of Resin-Molded Semiconductor Chip Using Phase-Shifted Sampling Moire Method. The Proceedings of The Computational Mechanics Conference. 2014. 2014. 0. 98-99
TAHARA Yusuke, MAEHARA Yoshihiro, JI Ke, IKEDA Akihiro, TOKO Kiyoshi, NAKASHI Kenichi. Development of Portable Taste Sensor. 電気学会研究会資料. CHS, ケミカルセンサ研究会. 2012. 2012. 1. 17-20
TAHARA Yusuke, IKEDA Akihiro, HABARA Masaaki, TOKO Kiyoshi. Development of a One-chip Multichannel Taste Sensor Chip. IEICE technical report. 2010. 110. 243. 37-40

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Patents (6)：

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Lectures and oral presentations (20)：

Low-temperature, high-concentration laser doping of 4H-SiC for low contact resistance
(SPIE Photonics West 2019)
Development of Al thin-film-source laser doping for low resistance contacts to 4H-SiC
(The 3rd Asian Applied Physics Conference 2018)
Formation of Low Resistance Contacts to p-type 4H-SiC by Using Laser Doping with Al Thin-Film Dopant Source
(31th International Microprocesses and Nanotechnology conference (MNC 2018) 2018)
Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser
(European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) 2018)
High-concentration, Room Temperature, and Low-cost Excimer Laser Doping for 4H-SiC Power Device Fabrication
(European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) 2018)

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Education (3)：

1996 - 1999 Kyushu University
1994 - 1996 Kyushu University
1990 - 1994 Kyushu University School of Engineering

Professional career (1)：

博士(工学) (九州大学)

Work history (3)：

2018/04 - 現在 Sojo University Faculty of Computer and Information Sciences, Department of Computer and Information Sciences
2007/04 - 2018/03 Kyushu University
1999/04 - 2007/03 Kyushu University

Association Membership(s) (2)：

THE JAPAN SOCIETY OF APPLIED PHYSICS , THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS

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