Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow

ARAKAWA Taro; AWA Yoshiki; IDE Tomoyoshi; HANEJI Nobuo; TADA Kunio; SUGIYAMA Masakazu; SHIMIZU Hiromasa; SHIMOGAKI Yukihiro; NAKANO Yoshiaki

Art

J-GLOBAL ID：200902299287907122 Reference number：05A0719767

Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH₄/H₂/Ar and O₂ with Constant Ar Flow

一定のAr流でCH₄/H₂/ArとO₂のサイクル注入によりGaNの電子サイクロトロン共鳴の反応性イオンエッチングで改良されたエッチングされた表面形態

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=05A0719767&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=05A0719767&from=J-GLOBAL&jstjournalNo=G0520B") }}

Author (9)： , , , , , , , ,
Material：
Volume： 44 Issue： 7B Page： 5819-5823 Publication year： Jul. 30, 2005
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=05A0719767&from=J-GLOBAL&jstjournalNo=G0520B") }}

Manufacturing technology of solid-state devices

Reference (18)：

ｍore...

, , , , , , , , ,

Return to Previous Page