Wakabayashi Hitoshi

ワカバヤシヒトシ | Wakabayashi Hitoshi

Affiliation and department：
Job title：教授

Research field (1)： Electronic devices and equipment

Research theme for competitive and other funds (6)：

2022 - 2025 Growth mechanism and thermoelectric conversion property of transition metal dichalcogenides thin films
2020 - 2025 社会実装に向けた超秩序構造物質ライブラリーに基づく合成プロセス開発
2018 - 2021 Self-Heating-Effect-Free p/n-Stacked-NW/Bulk-FinFETs and 6T-SRAM
2014 - 2019 Control of 3D atomic structures of impurities doped in semiconductors and its application to low-loss high efficient devices
2016 - 2018 Challenge to fabricate 3D structure of atomically thin TMDC film for future 2D-MISFET

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Papers (110)：

K. Cho, N. Sawamoto, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, R. Yokogawa, A. Ogura. Conformal deposition of WS₂ layered film by low-temperature metal-organic chemical vapor deposition. Japanese Journal of Applied Physics. 2023. 62. SG. SG1048-SG1048
Masaki Otomo, Masaya Hamada, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Chemical states of PVD-ZrS₂ film underneath scaled high-k film with self-oxidized ZrO₂ film as interfacial layer. Japanese Journal of Applied Physics. 2023. 62. SC. SC1015-SC1015
Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact. IEEE Journal of the Electron Devices Society. 2023. 11. 15-21
Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure. Scientific Reports. 2022. 12. 1
Taiga Horiguchi, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing. JAPANESE JOURNAL OF APPLIED PHYSICS. 2022. 61. 7

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MISC (308)：

川那子高暢, 松崎貴広, 梶川亮介, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整. Demonstration of High Gain WSe₂ CMOS Inverter operating at V_dd of 0.5 V. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
松浦賢太朗, 濱田昌也, 濱田拓也, 谷川晴紀, 坂本拓朗, 堀敦, 宗田伊理也, 川那子高暢, 角嶋邦之, 筒井一生, et al. Normally-off Sputtered MoS₂-nMISFETs for Large Scale Integration. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2020. 67th
執行直之, 渡辺正裕, 角嶋邦之, 星井拓也, 古川和由, 中島昭, 佐藤克己, 末代知子, 更屋拓哉, 高倉俊彦, et al. Three-Dimensional Device Simulation of Si IGBTs-Investigation of physical models and comparisons with measurements-. 電子情報通信学会技術研究報告(Web). 2020. 120. 239(SDM2020 22-34)
松橋泰平, 星井拓也, 沖田寛昌, 中島昭, 角嶋邦之, 若林整, 筒井一生. Analytical evaluation of 2DEG depletion voltage in polarization junction substrate. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2020. 67th
筒井一生, 松下智裕, 名取鼓太郎, 室隆桂之, 森川良忠, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, et al. 光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2019. 66th

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Patents (57)：

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Professional career (1)：

Doctor of Engineering (Tokyo Institute of Technology)

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