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J-GLOBAL ID：201801019015861992
Update date: Oct. 02, 2022
Yukinori Morita
モリタ ユキノリ | Yukinori Morita
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Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
https://staff.aist.go.jp/y.morita/index.html
Research keywords (3)：
Scanning Probe Microscopy
, High-k
, tunnel FET
Papers (35)：
Yukinori Morita, Koichi Fukuda, Yongxun Liu, Takahiro Mori, Wataru Mizubayashi, Shin-ichi O'uchi, Hiroshi Fuketa, Shintaro Otsuka, Shinji Migita, Meishoku Masahara, et al. Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application. JAPANESE JOURNAL OF APPLIED PHYSICS. 2017. 56. 4
Yukinori Morita, Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Shinji Migita, Kazuhiko Endo, Shin-ichi O'uchi, Yongxun Liu, Meishoku Masahara, Takashi Matsukawa, et al. Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET. JAPANESE JOURNAL OF APPLIED PHYSICS. 2016. 55. 4
Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'uchi, Yongxun Liu, Meishoku Masahara, et al. Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors. SOLID-STATE ELECTRONICS. 2015. 113. 173-178
Y. Morita, T. Maeda, H. Ota, W. Mizubayashi, S. O'uchi, M. Masahara, T. Matsukawa, K. Endo. Novel Wafer-Scale Uniform Layer-by-Layer Etching Technology for Line Edge Roughness Reduction and Surface Flattening of 3D Ge Channels. 2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). 2015
Yukinori Morita, Hiroyuki Ota, Meishoku Masahara, Tatsuro Maeda. Impact of H-2, O-2, and N-2 anneals on atomic-scale surface flattening for 3-D Ge channel architecture. 2015 SILICON NANOELECTRONICS WORKSHOP (SNW). 2015
ｍore...
MISC (100)：
Takahiro Mori, Yukinori Morita, Takashi Matsukawa. Effect of post-implantation annealing on Al-N isoelectronic trap formation in silicon: Al-N pair formation and defect recovery mechanisms. AIP Advances. 2018. 8. 5
Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Takahiro Mori, Yukinori Morita, Wataru Mizubayashi, Meishoku Masahara, Shinji Migita, Hiroyuki Ota, Kazuhiro Endo, et al. Simulation study of short-channel effects of tunnel field-effect transistors. Japanese Journal of Applied Physics. 2018. 57. 4
Shintaro Otsuka, Takahiro Mori, Yukinori Morita, Noriyuki Uchida, Yongxun Liu, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Meishoku Masahara, Takashi Matsukawa. Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2017. 70. 3-7
Takashi Matsukawa, Yongxun Liu, Takahiro Mori, Yukinori Morita, Shintaro Otsuka, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Meishoku Masahara. Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation. SOLID-STATE ELECTRONICS. 2017. 132. 103-108
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O'uchi, Junichi Tsukada, et al. Bias temperature instability in tunnel field-effect transistors. JAPANESE JOURNAL OF APPLIED PHYSICS. 2017. 56. 4
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Patents (25)：
相変化チャネルトランジスタ及びその駆動方法。
相変化チャネルトランジスタ及びその駆動方法。
トンネル電界効果トランジスタ
トンネル電界効果トランジスタの製造方法及びトンネル電界効果トランジスタ
トポロジカル相変化論理ゲート及びその駆動方法
ｍore...
Professional career (1)：
博士
Association Membership(s) (4)：
IEEE
, THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS
, The Japan Society of Vacuum and Surface Science
, THE JAPAN SOCIETY OF APPLIED PHYSICS
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